ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Bi-Directional Tried* Thyristor
Power Pac Triacs
6A to ISA RMS Up to 600 Volts
Isolated and Non-Isolated Tab
FEATURES:
POWER-GLAS™ passivated silicon chip for maximum reliability.
Very low off-state (leakage) current at room and elevated temperatures.
Inherent immunity from non-repetitive transient voltage damage (max.
critical rate-of-rise of on-state current subsequent to voltage breakover
triggering, di/dt = 10 A/jusec.).
Low on-state voltage at high current levels.
Excellent surge current capability.
1600 volts RMS Surge Isolation Voltage on Isolated Triacs.
Selected types available from factory for use where circuit requires
operation:
— with popular zero voltage triggering IC's
- at 400 Hz
— with low gate trigger current
— at higher voltage levels
— at higher commutating dv/dt levels
POWER PAC PACKAGE
ISOLATED TAB
SC140
SC142
SC147
NON-
ISOLATEDTAB
SC141
SC143
SC146
SC149
SC151
• Meets JEDEC TO-220AB specifications.
• Round leads — greatly simplifies assembly.
• Six standard lead forming configurations available
from factory (including TO-66 compatibility.)
Rugged, industry-proven packaging.
Molded
Silicone
Encapsulation
Tab Coin
Power Glas
Pallet
Plastic
Lock
3 at*
ISOLATED (RED)
NON-ISOLATED (BLUE)
PICTORIAL ASSEMBLY
Quality Semi-Conductors
ISOLATED TAB
SC140, 2. 7
NON-ISOLATED TAB
SC141, 3. 6, 9, SC151
MAXIMUM ALLOWABLE RATINGS
RMS ON-STATE
CURRENT,
TYPE
'T(RMS)
(1)
AMPERES
B
REPETITIVE PEAK
OFF-STATE VOLTAGE.
V
D
RM
(2)
0
E
M
PEAK ONE FULL CYCLE
SURGE (NON-REP) ON-STATE
CURRENT, ITSM AMPERES
50 Hz
AMPERES
60
Hz
AMPERES
I
2
t FOR FUSING
FOR TIMES AT(3)
(RMS AMPERE)
2
SECONDS 1.0
MILLISECOND
(RMS AMPERE)
2
SECONDS, 8.3
MILLISECONDS
VOLTS
VOLTS
VOLTS
VOLTS
ISOLATED TAB
6.5
SC140
8
SCI 42
10
SCI 47
NON-ISOLATED TAB
SC141
6
8
SCI 43
10
SCI 46
SCI 49
12
15
SCI 51
200
200
200
200
200
200
200
200
1
400
400
400
400
400
400
400
400
500
500
500
500
500
500
500
500
600
600
600
600
600
I
600
74
104
104
74
110
110
110
110
80
110
110
80
120
120
120
120
18
20
20
18
20
20
20
20
26.5
50
SO
26.5
60
60
60
60
600
600
Peak Gate Power Dissipation, P
GM
(4)
Average Gate Power Dissipation, PG(AV)
Peak Gate Current, I
GM
(4)
Peak Gate Voltage, V
GM
(4)
Storage Temperature, T
stg
Operating Temperature, Tj
Surge Isolation Voltage (5)
10 Watts for 10 Microseconds (See Chart 4)
0.5 Watts
See Chart 4
See Chart 4
-40°C to +125°C
-40 °C to +100 °C
16
0°
Volts
MAIN
TERMINAL
02
OFF
STATE
E
t
1
~-\v
MT
2
-
>N -STATE
£
1
<T
2
+
QUADRANT
7
/
" *
X
ST^
"^
3«o QUADRANT
3<
GATE Ol
MAIN
TERMINAL
TERMINAL ARRANGEMENT
ON-STATE
TYPICAL CHARACTERISTICS
VOLT-AMPERES
NOTES:
1. Ai the case reference point (see outline drawing) temperature of 80°C maximum (except 75°C maximum
for SCI 42 and SCI 49) and 360° conduction.
2. Ratings apply for zero gate voltage only. Ratings apply for either polarity of main terminal 2 voltage referenced to main terminal 1,
3. Ratings apply for either polarity of main terminal 2 referenced to main terminal 1,
4. Ratings apply for either polarity of gate terminal referenced to mum terminal 1.
5. Isolated tab triacs only. Rating applies from main terminals 1 and 2 and gate terminal to device mounting surface. Test voltage ii 50 or 60 Hz
sinusoidal wave form applied for one minute. Rating applies over the entire device operating temperature range.
ISOLATED TAB
SC140, 2, 7
CHARACTERISTICS
TEST
SYMBOL
WIN.
TYP.
MAX.
UNITS
NON-ISOLATED TAB
SC141, 3, 6, 9, SC151
TEST CONDITIONS
REF. NOTE
1
Repetitive Peak Off-
State Current
IDRM
_
-
_
-
mA
0.1
0.5
Volts
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDRM
=
Maximum Allowable Repeti-
tive Off-State Voltage Rating
Gate Open Circuited
Tc = +25°C
Tc = +100°C
T
c
= +25°C, I
TM
= 1 msec., Wide
Pulse, Duty Cycle <
2%
ITM = 9.2 A Peak
ITM = 8.5 A Peak
ITM = 11.5 A Peak
ITM = 11.5 A Peak
ITM = 1 4 A Peak
ITM = 14 A Peak
ITM = 17 A Peak
ITM = 21 A Peak
T
c
= +100°C, Rated V
DRM
Gate Open Circuited
Exponential Voltage Waveform
Peak On-State
Voltage
SCI 40
SCI 41
SCI 42
SC143
SCI 46
SCI 47
SC149
SC151
Critical Rate-of-Rise
of Off-State Voltage
(Higher values may
cause device
switching)
SC140, SC141
SC142, SC143
SC146.SC147
SCI 49
SCI 51
Critical Rate-of-Rise
of Commutating
Off-State Voltage
(Commutating dv/dt)
DC Gate Trigger
Current
VTM
1.85
.83
.75
.55
.65
.50
.65
1.52
1
dv/dt
Volts//nsec
1
dv/dt
(c)
30
50
100
100
100
4
100
150
150
200
250
_
—
__
—
-
Volts/Aisec
IT(RMS)
=
Rated Maximum Allow-
able RMS On-State Current, V
DRM
= Maximum Rated Peak Off-State
Voltage, Gate Open Circuited.
V
D
= 12 Vdc
TRIGGER MODE
1,4
IGT
_
-
-
-
-
-
-
-
_
50
50
50
80
80
80
mAdc
2
RL
100
100
50
50
50
25
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
TC
+25°C
-
-
-
DC Gate Trigger
Voltage
VGT
-
-
-
-
-
-
0.2
—
-
-
_
-
-
2.5
2.5
2.5
3.5
3.5
3.5
Vdc
MT2+ Gate +
MT2- Gate -
MT2+ Gate -
MT2+ Gate +
MT2- Gate -
MT2+ Gate -
V
D
= 12 Vdc
TRIGGER MODE
-40°C
2
RL
100
100
50
50
50
25
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
TC
+25°C
MT2+
MT2-
MT2+
MT2+
MT2-
MT2+
Vdc
MT2+
MT2-
MT2+
MT2-
Gate
Gate
Gate
Gate
Gate
Gate
Gate
Gate
Gate
Gate
+
-
-
+
-
-
+
-
-
+
-40°C
DC Gate Non-Trigger
Voltage
V
GD
TRIGGER MODE
RL
1000
Ohms
TC
+100°C
2,3
Embedded System
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