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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> T0610SH
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T0610SH

Description
700V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC
CategoryAnalog mixed-signal IC    Trigger device   
File Size62KB，5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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T0610SH Overview

700V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC

T0610SH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current50 mA
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current6 A
Off-state repetitive peak voltage700 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC

T0610SH Preview

®
T0610xH
T0612xH
STANDARD TRIACS
FEATURES
I
T(RMS)
= 6A
V
DRM
= 400V to 800V
High surge current capability
A1
A2
G
DESCRIPTION
The T06xxxH series of triacs uses a high
performance MESA GLASS technology. These
parts are intended for general purpose switching
and phase control applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
TSM
Parameter
RMS on-state current
(360° conductionangle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
di
G
/dt = 1 A/µs.
I
G
= 500 mA
Tc= 100
°C
tp = 8.3 ms
tp = 10 ms
I
2
t
dI/dt
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
T
stg
T
j
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
6
66
60
18
10
50
- 40, + 150
- 40, + 125
260
°C
°C
A
2
s
A/µs
Unit
A
A
TO220
non-insulated
(Plastic)
Symbol
V
DRM
V
RRM
January 1995
Parameter
D
Repetitive peak off-state voltage
T
j
= 125°C
400
Voltage
M
600
S
700
N
800
Unit
V
1/5
T0610xH / T0612xH
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
Parameter
Value
60
4
3
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
V
GT
V
GD
tgt
Test Conditions
V
D
=12V (DC) R
L
=33Ω
V
D
=12V (DC) R
L
=33Ω
V
D
=V
DRM
R
L
=3.3kΩ
V
D
=V
DRM
I
G
= 500mA
I
T
= 8.5A
dI
G
/dt = 3A/µs
I
T
= 250 mA Gate open
I
G
= 1.2 I
GT
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 25°C
Quadrant
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-II-III-IV
MAX
MAX
MIN
TYP
Sensitivity
10
25
1.5
0.2
2
12
50
mA
V
V
µs
Unit
I
GM
= 4 A (tp = 20
µs)
I
H
*
I
L
Tj= 25°C
Tj= 25°C
I-III-IV
II
MAX
TYP
TYP
MAX
MAX
MAX
MIN
MIN
25
25
50
1.65
5
2
200
2
50
50
100
mA
mA
V
TM
*
I
DRM
I
RRM
dV/dt *
(dV/dt)c *
ITM= 8.5A tp= 380µs
V
D
= V
DRM
V
R
= V
RRM
VD=67%V
DRM
Gate open
(dI/dt)c = 2.7 A/ms
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
Tj= 110°C
V
µA
mA
500
5
V/µs
V/µs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ORDERING INFORMATION
T
TRIAC MESA GLASS
CURRENT
2/5
06
10
SENSITIVITY
M
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE
®
T0610xH / T0612xH
Fig.1 :
Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P (W)
180
O
P(W)
10
8
6
4
2
o
Tcase (
o
C)
Rth = 0
o
C/W
2.5
o
C/W
5
o
C/W
10
o
C/W
= 180
= 120
= 90
o
o
10
8
6
4
-95
-100
-105
-110
-115
= 60
= 30
o
o
2
I
T(RMS)
(A)
0
0
1
2
3
4
5
6
-120
Tamb ( C)
o
0
0
20
40
60
80
100
120
-125
140
Fig.3 :
RMS on-state current versus case tempera-
ture.
I T(RMS) (A)
Fig.4 :
Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
7
6
Zt h( j-c)
5
4
3
2
1
0
0
Tcase( C)
10 20 30 40 50 60 70 80 90 100 110 120 130
o
= 180
o
0.1
Zt h( j-a)
tp (s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
o
Ih[Tj=25 C]
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
60
Tj initial = 25 C
o
50
40
30
Ih
20
10
Tj(
o
C)
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0
1
10
100
100 0
3/5
®
T0610xH / T0612xH
Fig.7 :
Non repetitive surge peak on-state current
for a sinusoidal pulse with width : t
≤
10ms, and cor-
responding value of I
2
t.
I TSM (A). I
2
t (A
2
s)
Tj initial = 25
o
C
Fig.8 :
On-state characteristics (maximum values).
1000
I TM (A)
100
Tj initial
o
25 C
I TSM
100
Tj max
I
2
t
10
Tj max
Vto =0.93V
Rt =0.078
10
1
1
t (ms)
VTM (V)
10
1
0
0.5 1
1.5 2 2.5 3 3.5 4
4.5 5
5.5 6
4/5
®
T0610xH / T0612xH
PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
DIMENSIONS
Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
A
G
I
B
C
O
P
N1
N
F
D
M
L
J
H
A
B
C
D
F
G
H
I
J
L
M
N
N1
O
P
Marking : type number
Weight : 1.8 g
2.54
1.2
1.4
1.15
2.7
5.3
0.100
0.047 0.055
0.045
4.5
3.53
1.2
6.3
12.7
4.2
3.0
4.7
3.66
1.3
0.9
0.106
0.209
10.3
6.5
9.1
0.500
0.165
0.118
0.177 0.185
0.139 0.144
0.047 0.051
0.035
0.248 0.256
0.358
0.406
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
®
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T0610SH Related Products

T0610SH T0612SH T0610NH T0612DH T0612MH T0610MH T0612NH T0610DH
Description 700V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 700V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 800V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 400V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 600V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 600V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 800V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC 400V, 6A, 4 QUADRANT LOGIC LEVEL TRIAC
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant _compli _compli _compli
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 200 V/us 500 V/us 200 V/us 500 V/us 500 V/us 200 V/us 500 V/us 200 V/us
Maximum DC gate trigger current 25 mA 50 mA 25 mA 50 mA 50 mA 25 mA 50 mA 25 mA
Maximum DC gate trigger voltage 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3
Maximum leakage current 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -45 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 6 A 6 A 6 A 6 A 6 A 6 A 6 A 6 A
Off-state repetitive peak voltage 700 V 700 V 800 V 400 V 600 V 600 V 800 V 400 V
surface mount NO NO NO NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Trigger device type 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC

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