®
T16xxxH
STANDARD TRIACS
FEATURES
I
T(RMS)
= 16A
V
DRM
= 400V to 800V
High surge current capability
A1
A2
G
DESCRIPTION
The T16xxxH series of triacs uses a high
performance MESA GLASS technology. These
parts are intended for general purpose switching
and phase control applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
TSM
Parameter
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
di
G
/dt = 1 A/µs.
I
G
= 500 mA
Tc= 90
°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
T
stg
T
j
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
16
157
150
112
10
50
- 40, + 150
- 40, + 125
260
°C
°C
A
2
s
A/µs
Unit
A
A
TO220
non-insulated
(Plastic)
I
2
t
dI/dt
Symbol
V
DRM
V
RRM
January 1995
Parameter
D
Repetitive peak off-state voltage
T
j
= 125°C
400
Voltage
M
600
S
700
N
800
Unit
V
1/5
T16xxxH
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
Parameter
Value
60
2.4
1.8
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
Test Conditions
V
D
=12V (DC) R
L
=33Ω
Tj= 25°C
Quadrant
I-II-III
IV
V
GT
V
GD
tgt
V
D
=12V (DC) R
L
=33Ω
V
D
=V
DRM
R
L
=3.3kΩ
V
D
=V
DRM
I
G
= 500mA
I
T
= 22.5A
dI
G
/dt = 3A/µs
I
T
= 250 mA Gate open
I
G
= 1.2 I
GT
Tj= 25°C
Tj= 125°C
Tj= 25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
MAX
MAX
MAX
MIN
TYP
Sensitivity
12
50
50
1.5
0.2
2
13
50
75
V
V
µs
mA
Unit
I
GM
= 4 A (tp = 20
µs)
I
H
*
I
L
Tj= 25°C
Tj= 25°C
I-III-IV
II
MAX
TYP
TYP
MAX
MAX
MAX
MIN
MIN
50
50
100
1.5
10
2.5
500
5
75
75
150
mA
mA
V
TM
*
I
DRM
I
RRM
dV/dt *
(dV/dt)c *
I
TM
= 22.5A tp= 380µs
V
D
= V
DRM
V
R
= V
RRM
VD=67%V
DRM
Gate open
(dI/dt)c = 7 A/ms
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
Tj= 110°C
V
µA
mA
V/µs
10
V/µs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ORDERING INFORMATION
T
TRIAC MESA GLASS
CURRENT
2/5
16
12
SENSITIVITY
M
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE
®
T16xxxH
Fig.1 :
Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P (W)
180
O
P(W)
Tcase (
o
C)
Rth = 0
o
C/W
1
o
C/W
o
2 C/W
4
o
C/W
20
18
16
14
12
10
8
6
4
2
0
0 1 2
20
18
-90
-95
-100
-105
-110
-115
-120
= 180
= 120
= 90
= 60
= 30
o
o
o
o
o
16
14
12
10
8
6
4
I
T(RMS)
(A)
3 4 5
6 7 8
9 10 11 12 13 14 15 16
2
Tamb (
o
C)
0
0
20
40
60
80
100
120
-125
140
Fig.3 :
RMS on-state current versus case tempera-
ture.
I T(RMS) (A)
Fig.4 :
Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
20
18
16
14
12
10
Zt h( j-c)
= 180
o
0.1
Zt h( j-a)
8
6
4
2
0
0
Tcase ( C)
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
o
tp (s)
1E +2 5 E+2
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
o
Ih[Tj=25 C]
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
140
Tj initial = 25 C
o
120
100
80
60
40
20
Tj(
o
C)
Ih
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0
1
10
100
100 0
3/5
®
T16xxxH
Fig.7 :
Non repetitive surge peak on-state current
for a sinusoidal pulse with width : t
≤
10ms, and cor-
responding value of I
2
t.
I TSM (A). I
2
t (A
2
s)
Fig.8 :
On-state characteristics (maximum values).
I TM (A)
Tj initial = 25
o
C
1000
I TSM
1000
100
I
2
t
Tj initial
o
25 C
100
10
Tj max
Tj max
Vto =0.92V
Rt =0.022
t (ms)
VTM (V)
10
1
10
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
®
T16xxxH
PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
DIMENSIONS
Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
A
G
I
B
C
O
P
N1
N
F
D
M
L
J
H
A
B
C
D
F
G
H
I
J
L
M
N
N1
O
P
Marking : type number
Weight : 1.8 g
2.54
1.2
1.4
1.15
2.7
5.3
0.100
0.047 0.055
0.045
4.5
3.53
1.2
6.3
12.7
4.2
3.0
4.7
3.66
1.3
0.9
0.106
0.209
10.3
6.5
9.1
0.500
0.165
0.118
0.177 0.185
0.139 0.144
0.047 0.051
0.035
0.248 0.256
0.358
0.406
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
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5/5
®
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