UN6117R datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> UN6117R

UN6117R: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size179KB，13 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

Download Datasheet Parametric Compare View All

UN6117R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN

UN6117R Parametric

Parameter Name	Attribute value
Maker	Panasonic
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	210
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

Preview

Download Datasheet

View All

Transistors with built-in Resistor

UN6111/6112/6113/6114/6115/6116/6117/6118/

6119/6110/611D/611E/611F/611H/611L

Silicon PNP epitaxial planer transistor

For digital circuits

Unit: mm

6.9±0.1

1.05 2.5±0.1

(1.45)

±0.05

0.8

Resistance by Part Number

0.45

–0.05

+0.1

UN6111

UN6112

UN6113

UN6114

UN6115

UN6116

UN6117

UN6118

UN6119

UN6110

UN611D

UN611E

UN611F

UN611H

UN611L

)

10kΩ

22kΩ

47kΩ

10kΩ

4.7kΩ

22kΩ

0.51kΩ

1kΩ

47kΩ

4.7kΩ

2.2kΩ

4.7kΩ

)

10kΩ

22kΩ

47kΩ

—

5.1kΩ

10kΩ

—

10kΩ

22kΩ

10kΩ

4.7kΩ

0.45

–0.05

2.5±0.5

+0.1

1 : Emitter

2 : Collector

3 : Base

MT-1 Type Package

Internal Connection

2.5±0.1

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

(Ta=25˚C)

Ratings

–50

–100

400

150

–55 to +150

Unit

˚C

14.5±0.5

0.85

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

MT-1 type package, allowing supply with the radial taping.

0.65 max.

1.0

3.5±0.1

0.8

Features

0.15

0.7

4.0

UN6117R Related Products

	UN6117R	UN6115Q	UN6110Q	UN6115R	UN6115S	UN6117Q	UN6117S	UN6116S	UN6110S	UN6110R
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	210	160	160	210	290	160	290	290	290	210
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz
Maker	Panasonic	-	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic

Recommended Resources

Water and electricity saving faucet circuit 2

Resistance furnace thyristor temperature control circuit 3

Bookshelf active speakers 03

Simple modulator circuit for symbol generator display

Backup power control circuit diagram

Computer motherboard circuit diagram 440GX_23

【LPC54100】Successfully solve the keil compilation problem: I have always operated registers directly on NXP chips, and this is the first time I have used the one with the library. It is quite refreshing. First, let me show you the example resourcesThis is the...; 770781327 NXP MCU

PCB design component arrangement rules: PCB design layout also contains a lot of knowledge. At present, there are five common principles in PCB design, namely, component arrangement rules, layout principle according to signal direction, pri...; ？？？？？…… PCB Design

Why does MSP430F169 P54 automatically clear to zero after outputting 1?: Now use P54. Its on-chip function is the output of MCLK. Now set it to output and select IO function, but it will automatically clear after setting it to 1. (P5DIR|=BIT4;P5SEL&=~BIT4,P5OUT|=BIT4;)? ? ...; 王项电子 Microcontroller MCU

Implementation Method of Software Serial Interface (SCI) Based on C2000: introduction:The C2000 Piccolo series MCU chips generally integrate 1-2 hardware SCI (UART). Sometimes, due to cost or layout area considerations, only small packages or models with less resources can...; Aguilera DSP and ARM Processors

As a former smart wear developer, I prefer smart rings.: Submitting an ON Semiconductor event brought back my interest and impression of smart rings.I started my third company at the end of December 2015 and worked there until June 2018. It was engaged in t...; 辛昕 onsemi and Avnet IoT Innovation Design Competition

Industrial-grade fiber-optic self-healing Ethernet ring network core module technology: [i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:59[/i]801M is a high-performance, low-cost embedded network management type industrial Ethernet switch core technology module developed...; xioajinglchy Mobile and portable

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components