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ZMV930

Description
Variable Capacitance Diode, Very High Frequency, 8.7pF C(T), 12V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

ZMV930 Overview

Variable Capacitance Diode, Very High Frequency, 8.7pF C(T), 12V, Silicon, Hyperabrupt

ZMV930 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT, HIGH RELIABILITY
Minimum breakdown voltage12 V
ConfigurationSINGLE
Nominal diode capacitance8.7 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor200
Maximum repetitive peak reverse voltage12 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
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