PD-95025A
IRFR5305PbF
IRFU5305PbF
l
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= -55V
R
DS(on)
= 0.065Ω
G
I
D
= -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET
®
Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR5305
I-Pak
IRFU5305
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
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1
12/13/04
IRFR/U5305PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55
––– –––
V
V
GS
= 0V, I
D
= -250µA
––– -0.034 ––– V/°C Reference to 25°C, I
D
= -1mA
–––
––– 0.065
Ω
V
GS
= -10V, I
D
= -16A
-2.0 ––– -4.0
V
V
DS
= V
GS
, I
D
= -250µA
8.0
––– –––
S
V
DS
= -25V, I
D
= -16A
–––
––– -25
V
DS
= -55V, V
GS
= 0V
µA
–––
––– -250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
–––
––– 100
V
GS
= 20V
nA
–––
––– -100
V
GS
= -20V
–––
–––
63
I
D
= -16A
–––
–––
13
nC
V
DS
= -44V
–––
–––
29
V
GS
= -10V, See Fig. 6 and 13
–––
14
–––
V
DD
= -28V
–––
66
–––
I
D
= -16A
ns
–––
39
–––
R
G
= 6.8Ω
–––
63
–––
R
D
= 1.6Ω, See Fig. 10
D
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5
–––
and center of die contact
S
––– 1200 –––
V
GS
= 0V
–––
520 –––
pF
V
DS
= -25V
–––
250 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
71
170
-31
-110
-1.3
110
250
V
ns
nC
A
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
T
J
= 25°C, I
F
= -16A
di/dt = -100A/µs
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
V
DD
= -25V, starting T
J
= 25°C, L = 2.1mH
R
G
= 25Ω, I
AS
= -16A. (See Figure 12)
I
SD
≤
-16A, di/dt
≤
-280A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
2
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IRFR/U5305PbF
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
1000
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
100
10
10
-4.5V
20µs PULSE WIDTH
T
J
= 25°C
c
A
0.1
1
10
100
-4.5V
20µs PULSE WIDTH
T
C
= 175°C
J
1
10
1
1
0.1
A
100
-VDS , Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25°C
T
J
= 175°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -27A
-I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
4
5
6
7
V
DS
= -25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= -10V
80 100 120 140 160 180
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U5305PbF
2500
2000
-V
GS
, Gate-to-Source Voltage (V)
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -16A
V
DS
= -44V
V
DS
= -28V
16
C, Capacitance (pF)
1500
C
oss
12
1000
8
C
rss
500
4
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
100
100
100µs
T
J
= 175°C
T
J
= 25°C
10
1ms
10
0.4
0.8
1.2
1.6
V
GS
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
A
100
2.0
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U5305PbF
V
DS
35
R
D
V
GS
30
D.U.T.
+
-I
D
, Drain Current (A)
25
-10V
20
15
10
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
5
0
25
50
75
100
125
150
175
10%
T
C
, Case Temperature ( °C)
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
t
2
0.1
0.05
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
R
G
V
DD
5
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