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PMBF170

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size375KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMBF170 Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

PMBF170 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

PMBF170 Related Products

PMBF170 PRA100C7-264RBLNT31 PMBF170,235
Description Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB Array/Network Resistor, Bussed, Thin Film, 0.1W, 264ohm, 50V, 0.1% +/-Tol, -10,10ppm/Cel, 2806, PMBF170 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin
package instruction SMALL OUTLINE, R-PDSO-G3 SMT, 2806 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant
JESD-609 code e3 e2 e3
Number of terminals 3 14 3
Package form SMALL OUTLINE SMT SMALL OUTLINE
Terminal surface Tin (Sn) Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier Tin (Sn)
Is it Rohs certified? conform to conform to -
Maker Nexperia - Nexperia
ECCN code EAR99 EAR99 -
Other features LOGIC LEVEL COMPATIBLE - LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - 60 V
Maximum drain current (ID) 0.3 A - 0.3 A
Maximum drain-source on-resistance 5 Ω - 5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 10 pF - 10 pF
JEDEC-95 code TO-236AB - TO-236AB
JESD-30 code R-PDSO-G3 - R-PDSO-G3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type N-CHANNEL - N-CHANNEL
Guideline IEC-60134 - IEC-60134
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 30 - 30
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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