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BAV99...
Silicon Switching Diode
•
For high-speed switching applications
•
Series pair configuration
•
BAV99S / U: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAV99
BAV99W
!
BAV99S
BAV99U
$
#
, "
"
, !
,
,
,
,
!
Type
BAV99
BAV99S
BAV99U
BAV99W
1
Pb-containing
Package
SOT23
SOT363
SC74
SOT323
Configuration
series
dual series
dual series
series
Marking
A7s
A7s
A7s
A7s
package may be available upon special request
1
2007-09-19
BAV99...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
I
R
-
-
-
-
-
-
0.15
30
50
mV
µA
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
-
-
1.5 pF
Diode capacitance
C
T
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Ω
Test circuit for reverse recovery time
D.U.T.
t
rr
-
-
4
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
EHN00019
Oscillograph:
R
= 50,
t
r
= 0.35ns
C
≤
1pF
3
2007-09-19
Embedded System
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EEWORLD
