WEITRON
Surface Mount Switching Diode
* “G” Lead(Pb)-Free
Features:
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr 6ns
*Small Outline Surface Mount SOT-23 Package
BAS16 / BAV70
BAW56 / BAV99
SWITCHING DIODE
200-215m AMPERRES
70-75 VOLTS
3
1
2
SOT-23
SOT-23 Outline Dimensions
A
Unit:mm
TOP VIEW
B
C
E
G
H
D
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
http://www.weitron.com.tw
WEITRON
BAS16 / BAV70
BAW56 / BAV99
Maximum Ratings
(EACH DIODE)
Characteristic
Reverse Voltage
Forward Current
Peak Forward Surge Current
Non-Repetitive Peak @ t=1.0us
Forward Surge Current @ t=1.0s
Symbol
VR
IF
IFM
IFSM
BAS16
75
200
500
2.0
1.0
BAV70
BAW56
70
215
BAV99
Unit
Volts
mAdc
mAdc
Adc
Thermal Characteristics
Characteristic
Total Device Dissipation FR-5
Board *
1
, TA=25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Symbol
P
D
R
q
JA
P
D
R
q
JA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
-55 to + 150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Total Device Dissipation
Alumina Substrate*
2
TA=25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Electrical Characteristics
Characteristic
(TA=25 C Unless Otherwise Note) (Each Diode)
Symbol
Min
Max
Unit
Off Characteristics
Reverse Breakdown Voltage BAS16
(IBR=100 µAdc ) BAV70/BAW56/BAV99
Reverse Voltage Leakage Current
VR=75V
VR=70V
VR=25V,
VR=25V,
VR=75V,
VR=70V,
VR=70V,
TJ=150 C
TJ=150 C
TJ=150 C
TJ=150 C
TJ=150 C
BAS16
BAV70/BAW56/BAV99
BAS16/BAW56/BAV99
BAV70
BAS16
BAW56/BAV99
BAV70
VBR
75
70
1.0
2.5
Vdc
IR
30.0
60.0
50.0
50.0
100.0
µAdc
WEITRON
http://www.weitron.com.tw
BAS16 / BAV70
BAW56 / BAV99
Off Characteristic
Characteristic
Diode Capacition
BAS16/BAW56
(VR=0, f=1.0MHz) BAV70/BAV99
Forward Voltage
(IF=1.0 mAdc)
(IF=10 mAdc)
(IF=50 mAdc)
(IF=150 mAdc)
Reverse Recovery Time (Figure 1.)
IF=IR=10 mAdc, VR=5.0Vdc
IR(REC)=1.0 mAdc, RL=100
Symbol
C
D
Min
Max
2.0
1.5
715
855
1000
1250
6.0
Unit
PF
VF
mVdc
trr
nS
Device Marking
Item
BAS16
BAV70
BAW56
BAV99
Marking
A6
A4
A1
A7
Eqivalent Circuit diagram
3
3
3
3
1
1
2
1
2
1
2
Figure 1. Recovery Time Equivalent Test Circuit
820
+10V
2.0K
IF
0.1µF
100 µH
D.U.T.
50
OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
0.1µF
tr
10%
tp
t
IF
trr
t
90%
IR
INPUT SIGNAL
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp
»
trr
http://www.weitron.com.tw
WEITRON
BAS16 / BAV70
BAW56 / BAV99
FIGURE 2 .FORWARD VOLTAGE
100
10
FIGURE 3. LEAKAGE CURRENT
TA=150 C
IA. REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
TA=85 C
10
TA=-40 C
1.0
TA=125 C
0.1
TA=85 C
TA=25 C
1.0
TA=55 C
0.01
TA=25 C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
VR. REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
FIGURE 4. CAPACITANCE(BAS16)
CD. DIODE CAPACITANCE (PF)
CD. DIODE CAPACITANCE (PF)
0.68
1.00
FIGURE 5. CAPACITANCE (BAV70)
0.64
0.90
0.60
0.80
0.56
0.70
0.52
0
2
4
6
8
0.60
0
2
4
6
8
VR. REVERSE VOLTAGE (VOLTS)
VR. REVERSW VOLTAGE (VOLTS)
1.75
FIGURE 6. CAPACITANCE(BAW56)
CD. DIODE CAPACITANCE (PF)
CD. DIODE CAPACITANCE (PF)
0.68
FIGUTRE 7. CAPACITANCE (BAV99)
1.50
0.64
1.25
0.60
1.00
0.56
0.75
0
2
4
6
8
0.52
0
2
4
6
8
VR. REVERSE VOLTAGE (VOLTS)
VR. REVERSE VOLTAGE (VOLTS)
WEITRON
http://www.weitron.com.tw
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