DISCRETE SEMICONDUCTORS
DATA SHEET
PMBT3904
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 12
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Collector current capability I
C
= 200 mA
•
Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
•
General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT3906.
MARKING
TYPE NUMBER
PMBT3904
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Top view
PMBT3904
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
40
200
UNIT
V
mA
MARKING CODE
(1)
*1A
handbook, halfpage
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBT3904
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 12
2
NXP Semiconductors
Product data sheet
NPN switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; see Fig.2; note 1
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= I
c
= 0; V
BE
= 500 mV;
f = 1 MHz
60
80
100
60
30
−
−
650
−
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
PMBT3904
MAX.
60
40
6
200
200
100
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
UNIT
K/W
MAX.
50
50
UNIT
nA
nA
300
−
−
200
300
850
950
4
8
mV
mV
mV
mV
pF
pF
2004 Jan 12
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
SYMBOL
f
T
F
PARAMETER
transition frequency
noise figure
CONDITIONS
I
C
= 10 mA; V
CE
= 20 V;
f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
MIN.
300
−
−
5
MAX.
UNIT
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
d
t
r
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
delay time
rise time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−1
mA
−
−
−
−
35
35
200
50
ns
ns
ns
ns
handbook, halfpage
500
MGU821
MGU822
handbook, halfpage
250
h FE
400
(1)
IC
(mA)
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
300
150
(8)
(2)
(9)
200
100
(10)
(3)
100
50
0
10
−1
1
10
10
2
I C (mA)
10
3
0
0
2
4
6
8
10
VCE (V)
T
amb
= 25
°C.
V
CE
= 1 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(1)
(2)
(3)
(4)
I
B
= 5.5 mA.
I
B
= 5 mA.
I
B
= 4.5 mA.
I
B
= 3.5 mA.
(5) I
B
= 3 mA.
(6) I
B
= 2.5 mA.
(7) I
B
= 2 mA.
(8) I
B
= 1.5 mA.
(9) I
B
= 1 mA.
(10) I
B
= 0.5 mA.
Fig.3
Fig.2 DC current gain; typical values.
Collector current as a function of
collector-emitter voltage.
2004 Jan 12
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
handbook, halfpage
1200
MGU823
MGU824
VBE
handbook, halfpage
1200
VBEsat
(mV)
(mV)
1000
(1)
1000
(1)
(2)
800
(2)
800
600
600
(3)
(3)
400
400
200
10
−1
1
10
10
2
I C (mA)
10
3
200
10
−1
1
10
10
2
I C (mA)
10
3
V
CE
= 1 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter voltage as a function of
collector current.
Fig.5
Base-emitter saturation voltage as a
function of collector current.
10
3
handbook, halfpage
MGU825
VCEsat
(mV)
(1)
(2)
(3)
10
2
10
10
−1
1
10
10
2
I C (mA)
10
3
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current.
2004 Jan 12
5
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