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BCP69

Description
1500mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size851KB,6 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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BCP69 Overview

1500mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-223, 4 PIN

BCP69 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

BCP69 Preview

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BCP69 PNP General Purpose Amplifier
January 2007
BCP69
PNP General Purpose Amplifier
4
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 1.0A.
• Sourced from Process 77.
1
3
2
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T =25°C unless otherwise noted
a
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
- Continuous
Value
-20
-30
-5.0
-1.5
150
- 55 ~ +150
Units
V
V
V
A
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Value
1.0
8.0
125
Units
W
mW/°C
°C/W
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm; mounting pad for the collector lead min. 6cm
2
Electrical Characteristics*
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Test Conditions
I
C
= -10mA, I
B
= 0
I
C
= -1.0mA, I
E
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -25V, I
E
= 0
V
CB
= -25V, I
E
= 0, T
j
= 150
o
C
V
EB
= -5.0V, I
C
= 0
I
C
= -5mA, V
CE
= -1.0V
I
C
= -500mA, V
CE
= -1.0V
I
C
= -1.0A, V
CE
= -1.0V
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -1.0V
V
CB
= -10V, I
E
= 0, f = 1.0MHz
I
C
= -50mA, V
CE
= -10V, f = 20MHz
Min.
-20
-30
-5.0
Typ.
Max.
Units
V
V
V
-100
-10
-100
50
85
60
375
-0.5
-1.0
30
2.5
nA
uA
nA
V
CE(sat)
V
BE(on)
C
cb
h
fe
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small-Signal Current Gain
V
V
pF
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BCP69 Rev. B
BCP69 PNP General Purpose Amplifier
Typical Performance Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
300
Collector-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
V
CE
= 5.0V
250
200
150
100
- 40 °C
125 °C
0.8
0.6
0.4
0.2
0
0.01
- 40 °C
125 °C
25 °C
25 °C
50
0
0.01
I
C
0.1
1
- COLLECTOR CURRENT (A)
2
0.1
1
I
C
- COLLE CTOR CURRENT (A)
3
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
V
CE
= 5.0 V
0.4
1
I
C
10
100
- COLLECTOR CURRENT ( mA)
1000
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
C
OBO
- COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 2 0V
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
10
30
1
20
0.1
10
25
50
75
100
125
T
A
- AM BIENT TE MPE RATURE (
°
C)
150
0
0
10
20
V
CB
- COLLECTOR-BASE VOLTAGE (V)
30
2
BCP69 Rev. B
www.fairchildsemi.com
BCP69 PNP General Purpose Amplifier
Typical Performance Characteristics
Gain Bandwidth Product
vs Collector Current
250
V
CE
= 10V
700
1 .5
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Power Dissipation vs
Ambient Temperature
P
C
[W], POWER DISSIPATION
P - POWER DISSIPATION (mW)
600
500
1 .0
400
300
0 .5
200
TO-92
200
150
100
50
0
D
100
0 .0
0
0
0
25
25
50
50
75
75
100
100
125
125
150
150
1
I
C
10
100
- COLLECTOR CURRENT (mA)
1000
T
a
[ C ], A M B IE
A
T T E
(
M P E R A T U R E
TEMPER
N
TURE
o
C)
o
3
BCP69 Rev. B
www.fairchildsemi.com
BCP69 PNP General Purpose Amplifier
Mechanical Dimensions
SOT-223
0.08MAX
3.00
±0.10
MAX1.80
1.75
±0.20
3.50
±0.20
(0.60)
0.65
±0.20
+0.04
0.06
–0.02
2.30 TYP
(0.95)
4.60
±0.25
0.70
±0.10
(0.95)
0.25
–0.05
+0.10
(0.60)
1
0
°
~
0
°
1.60
±0.20
(0.46)
(0.89)
6.50
±0.20
7.00
±0.30
Dimensions in Millimeters
4
BCP69 Rev. B
www.fairchildsemi.com

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