C3D16060D
Silicon Carbide Schottky Diode
V
RRM
=
600 V
Z-R
ec
™
R
ectifieR
Features
Package
I
F
(
T
C
=135˚C)
= 22 A**
Q
c
=
42 nC**
•
•
•
•
•
•
•
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
Benefits
TO-274-3
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
•
•
•
•
•
Switch Mode Power Supplies
Power Factor Correction
Solar Inverters
Motor Drives
Electric Vehicle Charger
Part Number
C3D16060D
Package
TO-247-3
Marking
C3D16060
Maximum Ratings
(T
C
=25°C unless otherwise specified)
Symbol
V
RRM
V
RSM
V
DC
I
F
Parameter
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current (Per Leg/Device)
Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Power Dissipation (Per Leg)
Operating Junction and Storage Temperature
TO-247 Mounting Torque
Value
600
600
600
Unit
V
V
V
Test Conditions
Note
23/46
11/22
8/16
57/114
36/72
80/160
60/120
220/440
100*
43*
-55 to
+175
1
8.8
A
T
C
=25˚C
T
C
=135˚C
T
C
=150˚C
T
C
=25˚C, t
P
= 10 ms, Half Sine Wave, D=0.3
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=0.3
T
C
=25˚C, t
p
= 10 mS, Half Sine Wave, D=0.3
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=0.3
T
C
=25˚C, t
P
= 10
µs, Pulse
T
C
=25˚C
T
C
=110˚C
See
Fig. 3
I
FRM
I
FSM
I
FSM
P
tot
T
J
, T
stg
A
A
A
W
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
*
Per Leg,
**
Per Device
C3D16060D Rev. A
1
Electrical Characteristics (Per Leg)
Symbol
V
F
I
R
Q
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Typ.
1.6
1.9
10
20
21
441
39
33
Max.
1.8
2.4
50
200
Unit
V
μA
nC
Test Conditions
I
F
= 8 A T
J
=25°C
I
F
= 8 A T
J
=175°C
V
R
= 600 V T
J
=25°C
V
R
= 600 V T
J
=175°C
V
R
= 600 V, I
F
= 8A
di/dt = 500 A/μs
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
Note
C
Total Capacitance
pF
Note:
1.
This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
R
θJC
*
Parameter
Thermal Resistance from Junction to Case
Typ.
1.5 *
0.75 **
Unit
°C/W
Per Leg,
**
Per Device
Typical Performance (Per Leg)
Forward Characteristics
10
10
100
100
90
90
80
80
I
R
Reverse Current (uA)
Reverse Characteristics
9
9
8
8
I
F
Forward Current (A)
T
J
=
25°C
T
J
=
75°C
T
J
= 1
25°C
T
J
=
175°C
6
6
5
5
4
4
3
3
2
2
1
1
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
I
R
Reverse Current (
μ
A)
7
7
I
F
Forward Current (A)
70
70
60
60
50
50
40
40
T
J
=
25°C
T
J
=
75°C
T
J
= 1
25°C
T
J
=
175°C
30
30
20
20
10
10
0
0
0 100 200 300 400 500 600 700 800 900 1000
0
100
200
300
400
500
600
700
800
900
1000
V
R
Reverse Voltage (V)
V
R
Reverse Voltage (V)
V
F
Forward Voltage (V)
V
F
Forward Voltage (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2
C3D16060D Rev. A
Typical Performance (Per Leg)
Capacitance vs. Reverse Voltage
450
C3D08060 Current Derating
60
60
400
I
F(PEAK)
Peak Forward Current (A)
I
F(PEAK)
Peak Forward Current (A)
50
50
350
40
40
C Capacitance (pF)
30
30
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
300
250
200
20
20
150
10
10
100
50
0
0
25
25
50
75
100
125
150
175
50 75 100 125 150 175
0
1
T
C
Case Temperature
°
C)
°
C
)
Tc Case Temperature (°
(
* Frequency > 1KHz
1
10
10
100
100
1000
1000
V
R
Reverse Voltage (V)
V
R
Reverse Voltage (V)
Figure 4. Capacitance vs. Reverse Voltage
Figure 3. Current Derating
1.0E+01
1.0E+00
Zth (°C/W)
1.0E-01
1.0E-02
1.0E-03
1.E-07
1.E-06
1.E-05
1.E-04
Tim e (s)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5. Transient Thermal Impedance
3
C3D16060D Rev. A
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