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SMDJ12A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size346KB,5 Pages
ManufacturerPacelader Industrial
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SMDJ12A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

SMDJ5.0 thru SMDJ
44
0 CA
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
REVERSE VOLTAGE
6.8
to
520
Volts
PEAK PULSE POWER
3000
WATTS
SMC/DO-214AB
.108(2.75)
.128(3.25)
.220(5.59)
.245(6.22)
.260(6.60)
.280(7.11)
.006(.152)
.012(.305)
.079(2.00)
.103(2.62)
.002(.051)
.008(.203)
.305(7.75)
.320(8.13)
.030(0.76)
.050(1.27)
Dimensions in inches and (millimeters)
FEATURES
Glass passivated chip
3000 W peak pulse power capability
3
with a 10/1000 us waveform, repetitive
rate (duty cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
MECHANICAL DATA
Case Molded plastic
Epoxy UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750,
Method 2026
Polarity Color band denotes positive end (cathode)
except bidirectional
Mounting position: Any
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
C
ambient temperature unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
o
Parameter
Peak power dissipation with a 10/1000μs waveform
Peak pulse current wih a 10/1000μs waveform
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only
(1)
Maximum instantaneous forward voltage at 100 A
for unidirectional only
(2)
Operating junction and storage temperature range
Note:
Symbol
P
PP
I
PP
P
D
I
FSM
V
F
T
J
, T
STG
Value
Minimum 3000
See Next Table
6.0
300
3.5/5.0
–55 to +150
UNIT
Watts
Amps.
Watts
Amps.
Volts
°C
(1) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
(2) VF= 3.5V on SMDJ5.0 thru SMDJ90A devices and VF= 5.0V onSMDJ100 thru SMDJ440A devices.
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