SENSITRON
SEMICONDUCTOR
Date Sheet 4806, Rev. -
UF4001-G – UF4007-G
1.0A ULTRAFAST RECOVERY RECTIFIER
Green Products
Features
l
l
l
l
l
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Green Products in Compliance with the RoHS Directive
A
B
A
Mechanical Data
l
l
l
l
l
l
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
D
DO-41
Max
C
Dim
A
B
C
D
Min
Min
Max
25.4
—
4.06 5.21
0.71 0.864
2.00 2.72
In mm
1.000
—
0.159 0.205
0.028 0.034
0.079 0.107
In inch
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Max. Forward Voltage
@I
F
= 1.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
UF
UF
UF
UF
4001-G 4002-G 4003-G 4004-G
50
35
100
70
200
140
400
280
1.0
UF
UF
UF
4005-G 4006-G 4007-G
600
420
800
560
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
ΘJA
R
ΘJL
T
j
T
STG
50
20
1.0
30
1.3
5.0
100
75
10
60
15
-55 to +125
-55 to +150
1.7
A
V
µA
nS
pF
°C/W
°C/W
°C
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance, Junction to Ambient
Typical Thermal Resistance, Junction to Lead at
L= 0.375” (9.53mm)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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Data Sheet 4806, Rev. -
I
(AV)
, AVERAGE FWD RECTIFIED CURRENT (A)
Single phase half wave
Resistive or Inductive load
1-G7-G
Green Products
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
T
j
= 25
°
C
Pulse width = 300
µ
s
1.00
0.75
UF4001 - G - UF4003-G
1.0
UF4004-G
0.50
0.1
UF4005-G- UF4007-G
0.25
0
0
25
50
75
100
125
150
175
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1.0MHz
20
C
j
, CAPACITANCE (pF)
UF4001-G - UF4004-G
10
UF4005-G - UF4007-G
10
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50
Ω
NI (Non-inductive)
10
Ω
NI
100
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
Ω
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
Ω
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
Ω
.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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SENSITRON
SEMICONDUCTOR
Data Sheet 4806, Rev. –
1.0A ULTRA FAST RECOVERY RECTIFIER
UF4001-G-UF4007-G
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at
a value
exceeding the
absolute maximum
rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6-
The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
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hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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