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Datasheet> All Categories > semiconductor> Discrete semiconductor> BC328PNP
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BC328PNP

Description
800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size111KB，5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BC328PNP Overview

800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC328PNP Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.8000 A
Maximum Collector-Emitter Voltage45 V
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.6250 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor100
Rated crossover frequency100 MHz

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC327/A BC328 PNP
BC337/A BC338 NPN
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
C
BE
General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Emitter Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation at T
a
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
SYMBOL BC327/337
V
CEO
45
V
CES
50
V
EBO
I
C
I
CM
I
EM
I
B
I
BM
P
D
T
j
, T
stg
BC327A/337A
60
60
5
800
1000
1000
100
200
625
5
- 65 to +150
BC328/338
25
30
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
mW/ºC
ºC
R
th (j-a)
200
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
V
CEO
TEST CONDITION
I
C
=1mA, I
B
=0
BC327/337
BC327A/337A
BC328/338
I
C
=100µA, I
E
=0
BC327/337
BC327A/337A
BC328/338
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
J
=150 ºC
V
EB
=5V, I
C
=0
I
C
=500mA, I
B
=50mA
I
C
=500mA, V
CE
=1V
MIN
45
60
25
50
60
30
5.0
100
5
10
0.7
1.2
MAX
UNITS
V
V
V
V
V
V
V
nA
µA
µA
V
V
Collector Emitter Voltage
V
CES
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
V
EBO
I
CBO
I
EBO
*V
CE (sat)
*V
BE (on)
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
µ
BC327_338Rev_3 290606D
Continental Device India Limited
Data Sheet
Page 1 of 5

BC328PNP Related Products

BC328PNP BC327A BC337 BC338NPN BC327 BC328 BC337A BC338
Description 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN SILICON AF MEDIUM POWER TRANSISTOR
Number of terminals 3 3 3 3 3 3 3 -
Transistor polarity NPN NPN NPN NPN NPN - NPN -
Maximum collector current 0.8000 A 0.8000 A 0.8000 A 0.8000 A 0.8000 A 0.5000 A 0.8000 A -
Maximum Collector-Emitter Voltage 45 V 45 V 45 V 45 V 45 V 25 V 45 V -
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE Active ACTIVE -
packaging shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND -
Package Size CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL -
Terminal form WIRE WIRE WIRE WIRE WIRE THROUGH-HOLE WIRE -
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
structure SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Number of components 1 1 1 1 1 1 1 -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Maximum ambient power consumption 0.6250 W 0.6250 W 0.6250 W 0.6250 W 0.6250 W - 0.6250 W -
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL - GENERAL PURPOSE SMALL SIGNAL -
Minimum DC amplification factor 100 100 100 100 100 100 100 -
Rated crossover frequency 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 80 MHz 100 MHz -

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