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Datasheet> All Categories > Discrete semiconductor> The transistor> PUMH17
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PUMH17

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size379KB，10 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PUMH17 Overview

Small Signal Bipolar Transistor

PUMH17 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionTransistor 2xNPN 50V 0.1A 47K 22K SOT363 NXP, PUMH17 NPN Digital Transistor, 100 mA 50 V 47 kΩ, Ratio Of 2.13, 6-Pin UMT
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

PUMH17 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN Resistor-Equipped Transistors (RET).
Table 1.
Product overview
Package
NXP
PEMH17
PUMH17
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD17
PUMD17
PNP/PNP
complement
PEMB17
PUMB17
Type number
1.2 Features
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
33
0.37
Typ
-
-
47
0.47
Max
50
100
61
0.57
Unit
V
mA
kΩ
NXP Semiconductors
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
R1
R2
TR2
TR1
R2
R1
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
sym063
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMH17
PUMH17
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMH17
PUMH17
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
5T
H4*
Type number
PEMH17_PUMH17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
2 of 9
NXP Semiconductors
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
Max
50
50
10
+40
−10
100
100
200
200
+150
150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
[1][2]
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
[1][2]
-
-
300
300
mW
mW
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMH17_PUMH17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
3 of 9
NXP Semiconductors
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1][2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
μA
V
CE
= 0.3 V; I
C
= 2 mA
Min
-
-
-
-
60
-
-
4
33
0.37
-
Typ
-
-
-
-
-
-
1.7
2.7
47
0.47
-
Max
100
1
50
110
-
150
1.2
-
61
0.57
2.5
pF
mV
V
V
kΩ
Unit
nA
μA
μA
μA
Per transistor
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PEMH17_PUMH17_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
4 of 9
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

PUMH17 Related Products

PUMH17 PEMH17
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Is it Rohs certified? conform to conform to
Maker Nexperia Nexperia
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code compliant compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60 60
JESD-30 code R-PDSO-G6 R-PDSO-F6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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