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BD433NPN

Description
4 A, 32 V, NPN, Si, POWER TRANSISTOR, TO-225AA
Categorysemiconductor    Discrete semiconductor   
File Size93KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric View All

BD433NPN Overview

4 A, 32 V, NPN, Si, POWER TRANSISTOR, TO-225AA

BD433NPN Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage32 V
Processing package descriptionPLASTIC, CASE 77-09, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor50
Rated crossover frequency3 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
EC
B
TO126
Plastic Package
Intended for use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Total Dissipation @ T
C=
25ºC
Total Dissipation @ T
a=
25ºC
Derate above 25ºC
Operating and Storage
Junction Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R
th (j-c)
R
th (j-a)
3.5
100
ºC/W
ºC/W
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
B
P
D
P
D
BD433
BD434
22
22
22
BD435
BD436
32
32
32
BD437
BD438
45
45
45
5.0
4.0
7.0
1.0
36.0
1.25
10
- 65 to 150
BD439
BD440
60
60
60
BD441
BD442
80
80
80
UNIT
V
V
V
V
A
A
A
W
W
mW/ ºC
ºC
Collector Peak Current (t=10ms_
I
CM
T
j
, T
stg
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
V
CB
=Rated V
CBO,
I
E
=0
I
CBO
Collector Cut off Current
<100 <100 <100
<100
<100
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining
Voltage
Collector Emitter Saturation
Voltage
Base Emitter On Voltage
I
CES
I
EBO
*V
CEO (sus)
*V
CE (sat)
V
BE
=0, V
CE
=Rated V
CES
V
EB
=5V
,
I
C
=0
I
C
=100mA, I
B
=0
I
C
=2.0A, I
B
=0.2A
<100
<1.0
>22
<0.5
<100
<1.0
>32
<0.5
<100
<1.0
>45
<0.6
typ 0.58
<1.1
<1.1
<1.2
<1.5
<1.5
<100
<1.0
>60
<0.8
<100
<1.0
>80
<0.8
UNIT
µA
µA
mA
V
V
V
V
*V
BE (on)
I
C
=10mA, V
CE
=5V
ALL
I
C
=2.0A, V
CE
=1V
Data Sheet
Continental Device India Limited
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