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BDX34D

Description
10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size124KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D
BDX34, 34A, 34B, 34C, 34D
TO-220
Plastic Package
Power Darlington for Linear Switchilng Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current -
Continuous
Peak
Base Current
Device Dissipation
@ Tc=25ºC
Derate Above 25ºC
Operating And Storage
Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
BDX33
BDX34
45
45
BDX33A BDX33B BDX33C BDX33D
BDX34A BDX34B BDX34C BDX34D
60
80
100
120
60
80
100
120
5.0
10
15
0.25
70
0.56
-65 to +150
UNIT
V
V
V
A
A
A
W
W/ºC
ºC
T
j
, T
stg
R
th(j-c)
1.78
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST
BDX33 BDX33A BDX33B BDX33C BDX33D
CONDITION
BDX34 BDX34A BDX34B BDX34C BDX34D
Breakdown (sus) Voltage
V
CEO(sus)
*
V
CER(sus)
*
V
CEX(sus)
*
Collector-Cut off Current
I
CEO
I
C
=100mA, I
B
=0
I
C
=100mA,
R
BE
=100 W
I
C
=100mA,
V
BE
=1.5V
V
CE
=1/2rated
V
CEO
, I
B
=0
Tc=100ºC
V
CE
=1/2rated
V
CEO
, I
B
=0
I
CBO
I
E
=0,V
CB
=Rated
V
CBO
,
Tc=100ºC
I
E
=0,V
CB
=Rated
V
CBO
,
>45
>60
>80
>100
>120
UNIT
V
>45
>45
<0.5
>60
>60
<0.5
>80
>80
<0.5
>100
>100
<0.5
>120
>120
<0.5
V
V
mA
<10
<10
<10
<10
<10
mA
<1
<1
<1
<1
<1
mA
<5
<5
<5
<5
<5
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

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