Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
BUX84, BUX84A
BUX84, 84A
NPN PLASTIC POWER TRANSISTORS
High Voltage, High Speed Power Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
3
B
H
F
C
E
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
M IN.
14.42
9.63
3.56
M A X.
N
L
O
1 2 3
D
G
J
M
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
A
O
ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 0.3A; I
B
= 30 mA
D.C. current gain
I
C
= 0.1 A; V
CE
= 5 V
V
CES
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
84
max. 800
max. 400
max.
max.
max.
max. 1.5
min.
30
84A
800 V
400 V
2.0
A
40
W
150
°C
0.8 V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
V
CES
V
CEO
V
EBO
84
max. 800
max. 400
max.
84A
800 V
400 V
5.0
V
Continental Device India Limited
Data Sheet
All dim insions in m m .
K
Page 1 of 3
BUX84, BUX84A
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
V
BE
= 0; V
CE
= Rated V
CES
V
BE
= 0; V
CE
= Rated V
CES
; T
C
= 125°C
Emitter cut-off current
I
C
= 0; V
EB
= 5V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; V
BE
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 0.3 A; I
B
= 30 mA
I
C
= 1 A; I
B
= 0.2 A
D.C. current gain
I
C
= 0.1 A; V
CE
= 5 V
Transition frequency f = 1 MHz
I
C
= 0.2 A; V
CE
= 10 V
Switching time
I
C
= 1A; V
CC
= 250V
I
B
= 0.2A; –I
B
= 0.4A
Turn on time
Storage time
Fall time
I
C
I
CM
I
B
P
tot
T
j
T
stg
R
th j–c
max.
max.
max.
max.
max.
2.0
3.0
0.75
40
150
–65 to +150
3.125
A
A
A
W
ºC
ºC
°C/W
=
84
I
CES
I
CES
I
EBO
max.
max.
max.
0.2
1.5
1.0
400
800
5.0
84A
mA
mA
mA
V
V
V
0.8 V
1.0 V
V
V
CEO(sus)
* min.
V
CES
min.
V
EBO
min.
V
CEsat
*
V
CEsat
*
V
BEsat
*
h
FE
*
f
T
max. 1.5
max. 3.0
max.
min.
typ.
1.1
30
20
MHz
t
on
t
s
t
f
max
max.
max.
0.5
3.5
1.4
µs
µs
µs
* Pulsed: pulse duration = 300 µs; duty cycle
≤
2%.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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