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IPB027N10N3

Description
120 A, 100 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size529KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IPB027N10N3 Overview

120 A, 100 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

IPB027N10N3 Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage100 V
Processing package descriptionGreen, Plastic, TO-263, 3 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current120 A
Rated avalanche energy1000 mJ
Maximum drain on-resistance0.0027 ohm
Maximum leakage current pulse480 A
IPB027N10N3 G
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