EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF6729MTR1PBF

Description
RoHs Compliant and Halogen-Free
File Size236KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Compare View All

IRF6729MTR1PBF Online Shopping

Suppliers Part Number Price MOQ In stock  
IRF6729MTR1PBF - - View Buy Now

IRF6729MTR1PBF Overview

RoHs Compliant and Halogen-Free

PD - 96229
HEXFET
®
Power MOSFET plus Schottky Diode
‚
RoHs Compliant and Halogen-Free

V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Integrated Monolithic Schottky Diode
30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible

Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Ultra Low Package Inductance
42nC
14nC
4.9nC
40nC
29nC
1.8V
l
Optimized for High Frequency Switching

l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques

l
100% Rg tested
DirectFET™ ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

l
IRF6729MPbF
IRF6729MTRPbF
Typical values (unless otherwise specified)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6729MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6729MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
6
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
30
±20
31
25
190
250
260
25
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
100
ID= 25A
VDS= 24V
VDS= 15V
A
mJ
A
5
4
3
2
1
0
0
2
4
6
8
10
12
14
T J = 25°C
ID = 31A
T J = 125°C
16
18
20
120
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.83mH, R
G
= 25Ω, I
AS
= 25A.
www.irf.com
1
04/02/09

IRF6729MTR1PBF Related Products

IRF6729MTR1PBF IRF6729MPBF IRF6729MTRPBF
Description RoHs Compliant and Halogen-Free RoHs Compliant and Halogen-Free RoHs Compliant and Halogen-Free
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Reach Compliance Code - unknow compliant
ECCN code - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 260 mJ 260 mJ
Shell connection - DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 30 V 30 V
Maximum drain current (ID) - 31 A 31 A
Maximum drain-source on-resistance - 0.0018 Ω 0.0018 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PDSO-G3 R-PDSO-G3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 250 A 250 A
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Telling the technical life stories of engineers
I am an electronic engineer. I have studied English in China for more than ten years. I can neither listen nor read. I arrived in the UK on February 4, 2006. After a week of rest, I started looking fo...
1ying Automotive Electronics
Amplifier circuit after DAC
I want to amplify the voltage to about 25V after passing through the DAC, and then drive the DC fan after power amplification. What amplifier chip and power amplification should be used?...
茹古涵今 Electronics Design Contest
Find TX2416_B development board information
:surrender::surrender: Some time ago, I got kicked in the head by a donkey and picked up a TX2416_B development board. It has been more than a month since I got it. Now I don’t have any information pa...
High哥 Embedded System
How to get started with a new microcontroller or processor
The basic principles and functions of any MCU are similar. The only differences are the configuration and number of its peripheral function modules, instruction systems, etc. As for the instruction sy...
qinkaiabc Microcontroller MCU
Which manufacturer's board has the HiSilicon hi3515 chip?
As the title says......
雨泽佰佰 ARM Technology
Looking for IAR development software
I am a beginner and want to learn STM8 / STM32. I don't have IAR development software. I hope you can help me. I will be very grateful. Please contact QQ: 610370608....
daichuandi stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1850  894  1925  2020  1725  38  18  39  41  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号