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IRFH5053TRPBF

Description
9.3 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size252KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

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IRFH5053TRPBF Overview

9.3 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFH5053TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeQFN
package instructionHALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)21 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)46 A
Maximum drain current (ID)9.3 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.1 W
Maximum pulsed drain current (IDM)75 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 97359
IRFH5053PbF
Applications
l
l
HEXFET
®
Power MOSFET
3 Phase Boost Converter Applications
Secondary Side Synchronous Rectification
V
DSS
100V
R
DS(on)
max
18m
@V
GS
= 10V
Qg
24nC
Benefits
l
l
l
l
l
l
l
l
Very low R
DS(ON)
at 10V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
D
D
D
D
S
S
S
G
PQFN
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
100
± 20
9.3
7.4
46
75
3.1
2.0
0.025
-55 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
f
Typ.
–––
–––
Max.
1.6
40
Units
°C/W
Junction-to-Ambient
g
Notes

through
…
are on page 9
www.irf.com
12/16/08
1

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