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KBU608

Description
6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size196KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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KBU608 Overview

6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SINGLE PHASE SILICON BRIDGE RECTIFIER
KBU6005 - KBU610
KBU
PLASTIC PACKAGE
Ratings at T
a
=25 C Ambient Temperature unless otherwise specified. Single phase, half wave,
60Hz
,
resistive or inductive load. For capacitive load, derate current by 20%
DESCRIPTION
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5mm) Lead Length at T
a
=65ºC
Peak Forward Surge Current, 8.3ms single
half sine wave superimposed on rated load
(JEDEC method)
Maximum Forward Voltage at 6A DC at T
a
=
25ºC
Maximum Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance
Typical Thermal Resistance
Operating and Storage Temperature Range
at T
a
=25
o
C
T
a
=100
o
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
KBU
6005
50
35
50
KBU
601
100
70
100
KBU
602
200
140
200
KBU
604
400
280
400
6.0
KBU
606
600
420
600
KBU
608
800
560
800
KBU
610
1000
700
1000
UNIT
V
V
V
A
o
I
FSM
V
F
I
R
*R
th (j-a)
*R
th (j-L)
T
J,
T
stg
200
1.0
5.0
500
8.6
3.1
- 55 to +125
o
o
A
V
µA
µA
C/W
C/W
o
C
*Thermal resistance junction to Ambient with units in free air, PCB mounted on "0.5 x 0.5" (12 x 12mm) copper
pads, 0.375"(9.5mm) lead length
KBU6005_610Rev091205E
Continental Device India Limited
Data Sheet
Page 1 of 3

KBU608 Related Products

KBU608 KBU610 KBU6005 KBU601 KBU602 KBU604 KBU606
Description 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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