TrenchP
TM
Power MOSFET
IXTY48P05T
IXTA48P05T
IXTP48P05T
V
DSS
I
D25
R
DS(on)
=
=
- 50V
- 48A
30m
P-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
TO-263 (IXTA)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
Maximum Ratings
- 50
- 50
15
25
- 48
-150
- 48
300
150
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
0.35
2.50
3.00
V
V
V
V
A
A
A
mJ
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
GD
S
D (Tab)
G
S
D (Tab)
TO-220 (IXTP)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250A
V
DS
= V
GS
, I
D
= - 250A
V
GS
=
15V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min. Typ. Max.
- 50
- 2.0
- 4.5
50
V
V
nA
Easy to Mount
Space Savings
High Power Density
Applications
- 10
A
- 250
A
30 m
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS100293C(8/17)
IXTY48P05T
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= - 30V, I
D
= 0.5 • I
D25
R
G
= 3 (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
16
26
3660
495
215
20
15
30
13
53
16
21
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.83
C/W
C/W
IXTA48P05T
IXTP48P05T
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, -di/dt = -100A/s
V
R
= - 25V, V
GS
= 0V
30
43.4
- 2.8
Characteristic Values
Min.
Typ.
Max.
- 48
-192
-1.5
A
A
V
ns
nC
A
Note
1: Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTY48P05T
IXTA48P05T
IXTP48P05T
o
Fig. 1. Output Characteristics @ T
J
= 25 C
-48
V
GS
= -10V
- 9V
-40
- 8V
-180
-160
-140
-120
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
V
GS
= -10V
- 9V
I
D
- Amperes
I
D
- Amperes
-32
- 7V
- 8V
-100
-80
-60
-40
- 7V
-24
-16
- 6V
- 6V
-8
- 5V
- 4V
-20
0
- 5V
- 4V
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
0
-5
-10
-15
-20
-25
-30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
-48
V
GS
= -10V
- 9V
-40
- 8V
o
1.6
1.5
1.4
Fig. 4. R
DS(on)
Normalized to I
D
= - 24A Value vs.
Junction Temperature
V
GS
= -10V
I
D
= - 48A
R
DS(on)
- Normalized
I
D
- Amperes
-32
- 7V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
D
= - 24A
-24
- 6V
-16
- 5V
-8
- 4V
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
1.9
Fig. 5. R
DS(on)
Normalized to I
D
= - 24A Value vs.
Drain Current
-55
V
GS
= -10V
Fig. 6. Maximum Drain Current vs. Case Temperature
1.7
T
J
= 125 C
o
-45
R
DS(on)
- Normalized
1.5
I
D
- Amperes
T
J
= 25 C
o
-35
-25
1.3
-15
1.1
-5
0.9
0
-20
-40
-60
-80
-100
-120
-140
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY48P05T
IXTA48P05T
IXTP48P05T
Fig. 7. Input Admittance
-60
40
35
30
Fig. 8. Transconductance
T
J
= - 40 C
o
-50
T
J
= 125 C
o
-40
25 C
125 C
o
o
I
D
- Amperes
-30
g
f s
- Siemens
-6.0
-6.5
-7.0
25 C
o
- 40 C
o
25
20
15
10
-20
-10
5
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
0
0
-10
-20
-30
-40
-50
-60
-70
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-160
-140
-120
-7
-10
-9
-8
V
DS
= - 27.5V
I
D
= - 24A
I
G
= -1mA
Fig. 10. Gate Charge
I
S
- Amperes
-80
-60
-40
-20
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
V
GS
- Volts
T
J
= 125 C
T
J
= 25 C
o
o
-100
-6
-5
-4
-3
-2
-1
0
0
5
10
15
20
25
30
35
40
45
50
55
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
- 1,000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
R
DS(on)
Limit
Ciss
- 100
25μs
100μs
Capacitance - PicoFarads
1,000
Coss
I
D
- Amperes
1ms
- 10
T
J
= 150 C
o
10ms
100ms
DC
Crss
100
0
-5
-10
-15
-20
-25
-30
-35
-40
-1
-1
T
C
= 25 C
Single Pulse
- 10
o
- 100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
15.5
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
15.0
15.5
16.0
IXTA48P05T
IXTP48P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
t
r
- Nanoseconds
t
r
- Nanoseconds
15.0
I
D
= - 48A
T
J
= 25 C
o
14.5
I
D
= - 24A
14.5
14.0
14.0
13.5
T
J
= 125 C
o
13.5
25
35
45
55
65
75
85
95
105
115
125
13.0
-24
-28
-32
-36
-40
-44
-48
T
J
- Degrees Centigrade
I
D
- Amperes
26
24
22
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
t
r
o
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
27
26
25
24
23
22
21
20
19
18
12
11
25
35
45
55
65
75
85
95
105
115
26
24
125
18
17
16
15
14
13
38
t
d(on)
t
f
V
DS
= - 30V
t
d(off)
T
J
= 125 C, V
GS
= -10V
V
DS
= - 30V
R
G
= 3Ω, V
GS
= -10V
36
34
32
30
28
t
d(off)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r
- Nanoseconds
20
18
16
14
12
10
8
3
4
5
6
7
8
9
10
11
12
13
14
15
I
D
= - 24A, - 48A
t
f
- Nanoseconds
I
D
= - 48A, - 24A
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
17
41
35
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
t
f
t
d(off)
o
70
t
f
16
V
DS
= - 30V
t
d(off)
38
30
R
G
= 3Ω, V
GS
= -10V
T
J
= 125 C, V
GS
= -10V
V
DS
= - 30V
60
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
15
T
J
= 25 C, 125 C
o
o
35
t
f
- Nanoseconds
25
50
14
32
20
I
D
= - 24A
40
13
29
15
I
D
= - 48A
30
12
26
10
20
11
-24
-28
-32
23
5
3
4
5
6
7
8
9
10
11
12
13
14
15
10
I
D
- Amperes
-36
-40
-44
-48
R
G
- Ohms
© 2017 IXYS CORPORATION, All Rights Reserved
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