IRL520S, SiHL520S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5 V
12
3.0
7.1
Single
D
FEATURES
100
0.27
•
•
•
•
•
•
•
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS (on)
Specified at V
GS
= 4 V and 5 V
175°C Operating Temperature
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
D
2
PAK (TO-263)
G
G D
S
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
SnPb
D
2
PAK (TO-263)
IRL520S
SiHL520S
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Avalanche
Current
a
Energy
a
T
C
= 25 °C
Mount)
e
T
A
= 25 °C
Mount)
e
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
for 10 s
Single Pulse Avalanche Energy
b
Repetiitive Avalanche
V
GS
at 5 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
100
± 10
9.2
6.5
36
0.40
0.025
170
9.2
6.0
60
3.7
5.5
- 55 to + 175
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 3.0 mH, R
G
= 25
Ω,
I
AS
= 9.2 A (see fig. 12).
c. I
SD
≤
9.2 A, dI/dt
≤
110 A/µs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Document Number: 90382
S-Pending-Rev. A, 14-Jan-09
WORK-IN-PROGRESS
www.vishay.com
1
IRL520S, SiHL520S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
-
-
-
MAX.
62
40
2.5
°C/W
UNIT
Maximum Junction-to-Ambient
R
thJA
Maximum Junction-to-Ambient
R
thJA
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
R
thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 10 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 5 V
V
GS
= 4 V
I
D
= 5.5 A
b
I
D
= 4.6 A
b
100
-
1.0
-
-
-
-
-
3.2
-
0.12
-
-
-
-
-
-
-
-
-
2.0
± 100
25
250
0.27
0.38
-
V
V/°C
V
nA
µA
Ω
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Dynamic
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 50 V, I
D
= 5.5 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
490
150
30
-
-
-
9.8
64
21
27
-
-
-
12
3.0
7.1
-
-
-
-
ns
nC
pF
V
GS
= 5 V
I
D
= 9.2 A, V
DS
= 80 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 50 V, I
D
= 9.2 A,
R
G
= 9
Ω,
R
D
= 5.2
Ω,
see fig. 10
b
-
-
-
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of die
contact
D
-
-
4.5
7.5
-
nH
-
G
S
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
-
-
-
130
0.83
9.2
A
36
2.5
190
1.0
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 9.2 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 90382
S-Pending-Rev. A, 14-Jan-09
IRL520S, SiHL520S
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90382
S-Pending-Rev. A, 14-Jan-09
www.vishay.com
3
IRL520S, SiHL520S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 90382
S-Pending-Rev. A, 14-Jan-09
IRL520S, SiHL520S
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
5
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
10
%
V
GS
Fig. 9 - Maximum Drain Current vs. Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90382
S-Pending-Rev. A, 14-Jan-09
www.vishay.com
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