81RIA10 datasheet, PDF - EEWORLD Datasheet

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81RIA10: DescriptionSilicon Controlled Rectifier, 125A I(T)RMS, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC; CategoryAnalog mixed-signal IC Trigger device; File Size355KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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81RIA10 Overview

Silicon Controlled Rectifier, 125A I(T)RMS, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC

81RIA10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	350 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	120 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	0.00015 mA
JEDEC-95 code	TO-209AC
JESD-30 code	O-MUPM-H3
Maximum leakage current	20 mA
On-state non-repetitive peak current	1600 A
Number of components	1
Number of terminals	3
Maximum on-state current	70000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Maximum rms on-state current	125 A
Off-state repetitive peak voltage	100 V
Repeated peak reverse voltage	100 V
surface mount	NO
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Trigger device type	SCR

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Description	Silicon Controlled Rectifier, 125A I(T)RMS, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 125A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 125A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 125A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC	Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-209AC,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3	POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Nominal circuit commutation break time	350 µs	110 µs	110 µs	110 µs	350 µs	350 µs	350 µs	110 µs	110 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	120 mA	100 mA	100 mA	100 mA	120 mA	120 mA	120 mA	100 mA	100 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Maximum holding current	0.00015 mA	200 mA	200 mA	200 mA	150 mA	150 mA	150 mA	0.0002 mA	200 mA
JEDEC-95 code	TO-209AC	TO-209AC	TO-209AC	TO-209AC	TO-209AC	TO-209AC	TO-209AC	TO-209AC	TO-209AC
JESD-30 code	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3	O-MUPM-H3
Maximum leakage current	20 mA	20 mA	20 mA	20 mA	15 mA	15 mA	20 mA	20 mA	20 mA
On-state non-repetitive peak current	1600 A	1300 A	1300 A	1300 A	1700 A	1700 A	1700 A	1300 A	1300 A
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum on-state current	70000 A	70000 A	70000 A	70000 A	70000 A	70000 A	70000 A	70000 A	70000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	125 A	110 A	110 A	110 A	125 A	125 A	125 A	110 A	110 A
Off-state repetitive peak voltage	100 V	400 V	600 V	800 V	600 V	1000 V	200 V	100 V	200 V
Repeated peak reverse voltage	100 V	400 V	600 V	800 V	600 V	1000 V	200 V	100 V	200 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE	HIGH CURRENT CABLE
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Maker	International Rectifier （ Infineon ）	-	-	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Base Number Matches	-	1	1	1	1	1	1	-	-

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