U634H256BDK35G1 datasheet, PDF

U634H256BDK35G1: DescriptionNon-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size442KB，13 Pages; ManufacturerZentrum Mikroelektronik Dresden AG (IDT); Environmental Compliance

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U634H256BDK35G1 Overview

Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Zentrum Mikroelektronik Dresden AG (IDT)
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	35 ns
JESD-30 code	R-PDIP-T28
JESD-609 code	e3
length	34.7 mm
memory density	262144 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	5.1 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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