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NXP Semiconductors
Product data sheet
Schottky barrier diode
FEATURES
•
Low forward voltage
•
Small SMD package
•
Low capacitance.
APPLICATIONS
•
UHF mixer
•
Sampling circuits
•
Modulators
•
Phase detection.
DESCRIPTION
Planar Schottky barrier diode in a
small SOT23 plastic SMD package.
MARKING
TYPE NUMBER
BAT17
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
−
−
−65
−
MIN.
4
30
+150
100
MARKING
CODE
(1)
A3*
Fig.1 Simplified outline (SOT23) and symbol.
3
handbook, halfpage
2
BAT17
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
3
MAM171
1
MAX.
V
UNIT
mA
°C
°C
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
R
r
D
C
d
F
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise F
if
= 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
reverse current
diode forward resistance
diode capacitance
noise figure
V
R
= 3 V; see Fig.3
V
R
= 3 V; T
amb
= 60
°C;
see Fig.3
f = 1 kHz; I
F
= 5 mA
f = 1 MHz; V
R
= 0; see Fig.4
f = 900 MHz; note 1
350
450
600
0.25
1.25
15
1
8
CONDITIONS
MAX.
BAT17
UNIT
mV
mV
mV
μA
μA
Ω
pF
dB
UNIT
K/W
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Schottky barrier diode
GRAPHICAL DATA
BAT17
10
2
handbook, halfpage
IF
(mA)
10
MLC795
10
4
handbook, halfpage
IR
(nA)
10
3
(1)
MLC796
(1)
10
2
(2)
(3)
1
(2)
(3)
(4)
10
(4)
1
10
−1
10
−2
0
200
400
600
VF (mV)
800
10
1
0
1
2
V R (V)
3
(1) T
amb
= 100
°C.
(2) T
amb
= 60
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
(1) T
amb
= 100
°C.
(2) T
amb
= 60
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
MLC797
handbook, halfpage
0.8
Cd
(pF)
0.7
0.6
0.5
0.4
0
1
2
3
V R (V) 4
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4
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