EEWORLDEEWORLDEEWORLD

Part Number

Search

70T651S10BC

Description
CABGA-256, Tray
Categorystorage    storage   
File Size400KB,29 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

70T651S10BC Online Shopping

Suppliers Part Number Price MOQ In stock  
70T651S10BC - - View Buy Now

70T651S10BC Overview

CABGA-256, Tray

70T651S10BC Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeCABGA
package instructionLBGA, BGA256,16X16,40
Contacts256
Manufacturer packaging codeBC256
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Samacsys DescriptionCHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee0
length17 mm
memory density9437184 bit
Memory IC TypeDUAL-PORT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5,2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum standby current0.01 A
Minimum standby current2.4 V
Maximum slew rate0.405 mA
Maximum supply voltage (Vsup)2.6 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width17 mm
HIGH-SPEED 2.5V
256/128K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
Features
70T651/9S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T651/9 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
BE
3L
BE
2L
BE
1L
BE
0L
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array and 208-ball fine pitch
Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
BB
EE
01
LL
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
256/128K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
17L(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R(1)
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
TDI
TDO
JTAG
TCK
TMS
TRST
M/S
BUSY
R(2,3)
SEM
R
INT
R(3)
(4)
ZZ
L
ZZ
R
CONTROL
NOTES:
LOGIC
1. Address A
17x
is a NC for IDT70T659.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the sleep
mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
4869 drw 01
MAY 2019
DSC-5632/10
1
©2019 Integrated Device Technology, Inc.

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 61  2028  353  2308  906  2  41  8  47  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号