MTP4N80 datasheet, PDF - EEWORLD Datasheet

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MTP4N80: DescriptionTMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM; File Size123KB，8 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MTP4N80E/D

™

Data Sheet

TMOS E-FET.

™

Power Field Effect Transistor

Designer's

MTP4N80E

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

•

Robust High Voltage Termination

•

Avalanche Energy Specified

•

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

•

IDSS and VDS(on) Specified at Elevated Temperature

TMOS POWER FET

4.0 AMPERES

800 VOLTS

RDS(on) = 3.0 OHM

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Drain–Source Voltage

Drain–Gate Voltage (RGS = 1.0 MΩ)

Gate–Source Voltage — Continuous

Gate–Source Voltage

— Non–Repetitive (tp

≤

10 ms)

Drain Current — Continuous

Drain Current

— Continuous @ 100°C

Drain Current

— Single Pulse (tp

≤

µs)

Total Power Dissipation

Derate above 25°C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 100 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 10 mH, RG = 25

Ω)

Thermal Resistance — Junction to Case

Thermal Resistance

— Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

Symbol

VDSS

VDGR

VGS

VGSM

IDM

TJ, Tstg

EAS

θJC

θJA

Value

800

4.0

2.9

125

1.0

– 55 to 150

320

1.0

62.5

260

Unit

Vdc

Vpk

Adc

Apk

Watts

W/°C

°C

°C/W

°C

Designer’s Data for “Worst Case” Conditions

— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 5

Motorola TMOS

Motorola, Inc. 1996

Power MOSFET Transistor Device Data

MTP4N80 Related Products

	MTP4N80	MTP4N80E
Description	TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM	TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

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