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MJE3055T

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size77KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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MJE3055T Overview

POWER TRANSISTOR

MJE3055T Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PLASTIC POWER TRANSISTORS
MJE2955T PNP
MJE3055T NPN
TO-220
Plastic Package
With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and
Switching Regulator Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation upto T
c
=25ºC
Derate above 25ºC
Power Dissipation upto T
a
=25ºC
Derate above 25ºC
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
j
T
stg
VALUE
60
70
5.0
10
6.0
75
0.6
2.0
16
150
- 55 to +150
UNIT
V
V
V
A
A
W
W/ºC
W
mW/ºC
ºC
ºC
R
th (j-c)
R
th (j-a)
1.67
62.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter (sus) Voltage
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
SYMBOL
*V
CEO(sus)
I
CEX
I
CBO
I
CEO
I
EBO
*h
FE
*V
CE (sat)
*V
BE(on)
TEST CONDITION
I
C
=200mA, I
B
=0
V
CE
=70V, V
EB (off)
=1.5V
V
CE
=70V, V
EB (off)
=1.5V, T
C
=150ºC
V
CB
=70V, I
E
=0
V
CB
=70V, I
E
=0, T
C
=150ºC
V
CE
=30V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=4A, V
CE
=4V
I
C
=10A, V
CE
=4V
I
C
=4A, I
B
=400mA
I
C
=10A, I
B
=3.3A
I
C
=4A, V
CE
=4V
2
20
5
MIN
60
1.0
5.0
1.0
10
0.7
5.0
100
1.1
8.0
1.8
MAX
UNIT
V
mA
mA
mA
mA
mA
mA
V
V
V
MHz
f
T
I
C
=0.5A, V
CE
=10V, f=500KHz
Transition Frequency
*Pulse Test : Pulse width < 300µs, Duty Cycle < 2%
µ
Continental Device India Limited
Data Sheet
Page 1 of 3

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