UT8ER2M32S-22XFC datasheet, PDF

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UT8ER2M32S-22XFC: DescriptionSRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132; Categorystorage storage; File Size257KB，27 Pages; ManufacturerCobham PLC

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UT8ER2M32S-22XFC Overview

SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132

UT8ER2M32S-22XFC Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
package instruction	QFP,
Reach Compliance Code	unknown
Maximum access time	22 ns
JESD-30 code	S-CQFP-G132
JESD-609 code	e4
length	22.86 mm
memory density	67108864 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	132
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-55 °C
organize	2MX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP
Package shape	SQUARE
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	7.87 mm
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.85 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	GOLD
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
width	22.86 mm

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Standard Products

UT8ER1M32 32Megabit SRAM MCM

UT8ER2M32 64Megabit SRAM MCM

UT8ER4M32 128Megabit SRAM MCM

Data Sheet

June 2015

The most important thing we build is trust

FEATURES



20ns Read, 10ns Write maximum access times available



Functionally compatible with traditional 1M, 2M and 4M

x 32 SRAM devices



CMOS compatible input and output levels, three-state

bidirectional data bus

- I/O Voltages 2.3V to 3.6V, 1.7V to 2.0Vcore



Available densities:

- UT8ER1M32: 33, 554, 432 bits

- UT8ER2M32: 67, 108, 864 bits

- UT8ER4M32: 134, 217, 728 bits



Operational environment:

- Total-dose: 100 krad(Si)

- SEL Immune: <110 MeV-cm

/mg

- SEU error rate = 8.1 x10

-16

errors/bit-day assuming

geosynchronous orbit, Adam’s 90% worst environment,

and 6600ns default Scrub Rate Period (=97% SRAM

availability)



Packaging option:

- 132-lead side-brazed dual cavity ceramic quad flatpack



Standard Microelectronics Drawing:

- UT8ER1M32: 5962-10202

- QML Q, Q+ and Vcompliant

- UT8ER2M32: 5962-10203

- QML Q, Q+, and Vcompliant

- UT8ER4M32: 5962-10204

- QML Q and Q+ compliant

INTRODUCTION

The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high

performance CMOS static RAM multichip modules (MCMs)

organized as two, four or eight individual 524,288 words x 32

bits dice respectively. Easy memory expansion is provided by

active LOW chip enables (En), an active LOW output enable

(G), and three-state drivers. This device has a power-down

feature that reduces power consumption by more than 90% when

deselected. Autonomous (master) and demanded (slave)

scrubbing continues while deselected.

Writing to the device is accomplished by driving one of the chip

enable (En) inputs LOW and the write enable (W) input LOW.

Data on the 32 I/O pins (DQ0 through DQ31) is then written into

the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by driving one of the

chip enables (En) and output enable (G) LOW while driving

write enable (W) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

Note:

Only on En pin may be active at any time.

The 32 input/output pins (DQ0 through DQ31) are placed in a

high impedance state when the device is deselected (En HIGH),

the outputs are disabled (G HIGH), or during a write operation

(En LOW, W LOW).

36-00-01-009

Version 1.0.0

-1-

Cobham Semiconductor Solutions

Aeroflex.com/Memories

UT8ER2M32S-22XFC Related Products

	UT8ER2M32S-22XFC	5962R1020301QXC	5962R1020301VXC	5962R1020404QXC	UT8ER2M32M-22XPC	5962R1020403QXC	5962R1020401QXC	UT8ER2M32S-22XPC	UT8ER2M32M-22XFC	5962R1020304QXC
Description	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 2MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 2MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132
package instruction	QFP,	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP,	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP,	QFP,	QFP, TPAK132,1.8SQ,25
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	22 ns	20 ns	20 ns	20 ns	22 ns	20 ns	20 ns	22 ns	22 ns	20 ns
JESD-30 code	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132
JESD-609 code	e4	e4	e4	e4	e4	e4	e4	e4	e4	e4
length	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm
memory density	67108864 bit	67108864 bit	67108864 bit	134217728 bit	67108864 bit	134217728 bit	134217728 bit	67108864 bit	67108864 bit	134217728 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	MULTI-PORT SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of terminals	132	132	132	132	132	132	132	132	132	132
word count	2097152 words	2097152 words	2097152 words	4194304 words	2097152 words	4194304 words	4194304 words	2097152 words	2097152 words	4194304 words
character code	2000000	2000000	2000000	4000000	2000000	4000000	4000000	2000000	2000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
organize	2MX32	2MX32	2MX32	4MX32	2MX32	4MX32	4MX32	2MX32	2MX32	4MX32
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Qualified	Qualified	Qualified	Not Qualified	Qualified	Qualified	Not Qualified	Not Qualified	Qualified
Maximum seat height	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm
Maximum supply voltage (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal surface	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
width	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm
Maker	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	-	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC
Maximum operating temperature	105 °C	105 °C	105 °C	105 °C	-	105 °C	105 °C	-	105 °C	105 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-	-55 °C	-55 °C
Temperature level	OTHER	OTHER	OTHER	OTHER	-	OTHER	OTHER	-	OTHER	OTHER
Is it Rohs certified?	-	incompatible	incompatible	incompatible	-	incompatible	incompatible	-	-	incompatible
Other features	-	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	-	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	-	-	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY
I/O type	-	COMMON	COMMON	COMMON	-	COMMON	COMMON	-	-	COMMON
Output characteristics	-	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	-	-	3-STATE
Encapsulate equivalent code	-	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	-	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	-	-	TPAK132,1.8SQ,25
power supply	-	1.8,2.5/3.3 V	1.8,2.5/3.3 V	1.8,2.5/3.3 V	-	1.8,2.5/3.3 V	1.8,2.5/3.3 V	-	-	1.8,2.5/3.3 V
Filter level	-	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	-	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	-	-	MIL-PRF-38535 Class Q
Maximum standby current	-	0.035 A	0.035 A	0.035 A	-	0.035 A	0.035 A	-	-	0.035 A
Minimum standby current	-	1.7 V	1.7 V	1.7 V	-	1.7 V	1.7 V	-	-	1.7 V
Maximum slew rate	-	0.225 mA	0.225 mA	0.225 mA	-	0.225 mA	0.225 mA	-	-	0.225 mA
total dose	-	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	-	100k Rad(Si) V	100k Rad(Si) V	-	-	100k Rad(Si) V

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