Power Field-Effect Transistor, 6A I(D), 800V, 1.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PML, 3 PIN
| Parameter Name | Attribute value |
| Maker | SANYO |
| Parts packaging code | TO-3PML |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| Minimum drain-source breakdown voltage | 800 V |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 1.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| TS9944 | 2SK2635 | 2SK2636 | TS9934 | TS9936 | TS9938 | TS9928 | |
|---|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 6A I(D), 800V, 1.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PML, 3 PIN | Power Field-Effect Transistor, 5A I(D), 800V, 2.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 3.5A I(D), 800V, 3.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 5A I(D), 800V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 4A I(D), 800V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
| Parts packaging code | TO-3PML | TO-3PB | TO-3PB | TO-3PB | SFM | TO-220FI | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 2 | 2 | 2 | 2 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| Minimum drain-source breakdown voltage | 800 V | 800 V | 800 V | 800 V | 800 V | 800 V | 800 V |
| Maximum drain current (ID) | 6 A | 5 A | 7 A | 3.5 A | 5 A | 4 A | 2.5 A |
| Maximum drain-source on-resistance | 1.8 Ω | 2.6 Ω | 1.8 Ω | 3.6 Ω | 2.6 Ω | 2.6 Ω | 4.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | SANYO | - | - | - | SANYO | SANYO | SANYO |
| Configuration | - | Single | SINGLE | - | SINGLE | SINGLE | SINGLE |
| Number of components | - | - | 1 | - | 1 | 1 | 1 |