BAV21-L0A0G datasheet, PDF - EEWORLD Datasheet

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BAV21-L0A0G: DescriptionRectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35,; CategoryDiscrete semiconductor diode; File Size194KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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BAV21-L0A0G Overview

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35,

BAV21-L0A0G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Maximum repetitive peak reverse voltage	250 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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BAV19 / BAV20 / BAV21

Taiwan Semiconductor

Small Signal Product

High Voltage Switching Diode

FEATURES

- Fast switching device (trr<4.0ns)

- Through-hole device type mounting

- Hermetically sealed glasss

- Solder hot dip tin (Sn) lead finish

- All external surfaces are corrosion resistant and

leads are readily solderable

- Packing code with suffix "G" means

Halogen free

DO-35

MECHANICAL DATA

- Case: DO-35 package

- High temperature soldering guaranteed: 260

C/10s

- Polarity: Indicated by black cathode band

- Weight: 109 ± 4 mg

Hermetically Sealed Glass

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25 C unless otherwise noted)

PARAMETER

Power Dissipation

Peak Forward Surge

Current

Pulse Width = 1 s , Square Wave

Pulse Width = 1

μs

, Square Wave

SYMBOL

FSM

θJA

, T

STG

SYMBOL

= 100

μA

= 100 mA

= 200 mA

BAV19

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

BAV20

= 100 V

= 150 V

trr

100

(BR)

MIN

120

200

250

VALUE

500

200

300

-65 to +200

MAX

1.00

1.25

UNIT

C/W

Average Forward Current

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

PARAMETER

BAV19

Reverse Breakdown Voltage

BAV20

BAV21

Forward Voltage

UNIT

= 200 V

BAV21

= 0 , f = 1.0 MHz

(Note 1)

Note 1: Test condition : I

= I

= 30mA , R

=100Ω , I

=3mA

Document Number: DS_S1412015

Version: D14

BAV21-L0A0G Related Products

	BAV21-L0A0G	BAV20A0G	BAV21R0G	BAV21A0G	BAV21-L0R0G	BAV19-L0A0G	BAV20-L0A0G	BAV20-L0R0G
Description	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 code	O-LALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	200 °C	175 °C	175 °C	175 °C	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-55 °C	-55 °C	-55 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	GLASS	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	250 V	200 V	250 V	250 V	250 V	120 V	200 V	200 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-	conform to	conform to
Maker	Taiwan Semiconductor	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Maximum power dissipation	0.5 W	-	-	-	0.5 W	0.5 W	0.5 W	0.5 W
Maximum reverse recovery time	0.05 µs	-	-	-	0.05 µs	0.05 µs	0.05 µs	0.05 µs

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