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BAV21-F

Description
SIGNAL DIODE,
CategoryDiscrete semiconductor    diode   
File Size86KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric Compare View All

BAV21-F Overview

SIGNAL DIODE,

BAV21-F Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
BAV17
THRU
BAV21
SMALL SIGNAL SWITCHING DIODE
FEATURES
* Silicon epitaxial planar diode
* DO-35 Package,glass case
* High speed switching diode
* 500 mW power dissipation
* Polarity: Color band denotes cathode
DO-35
.022 (0.6 )
DIA.
.018 (0.46)
1.083(27.5)
TYP.
.150 (3.8)
MAX.
.087 (2.2)
MAX.
1.083(27.5)
TYP.
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
Half w ave rectification w ith resist.load
@T
A
=25 and f 50Hz
Forw ard surge current @ t<1s and T
J
=25
@ T
A
=25
Pow er dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS
V
R
V
RM
I
(AV)
I
FSM
P
tot
R
θJA
T
J
T
STG
BAV17
20
25
BAV18
50
60
BAV19
100
120
250
1)
1.0
500
350
175
-55 --- +175
1)
BAV20
150
200
BAV21
200
250
UNITS
V
V
mA
A
mW
K/W
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
MIN
Forw ard voltage @ I
F
=100mA
Leakage current
at reverse voltage
Capacitance
@T
j
=25
@T
j
=100
f =1MH
Z
TYP
-
-
-
1.5
-
MAX
1.0
100
UNITS
V
nA
μA
V
F
I
R
-
-
-
-
-
15
-
50
@ V
F
=V
R
=0V
C
J
t
rr
pF
ns
Reverse recovery time
f rom I
F
=30mA to I
R
=30mA
from I
RR
=3mA, R
L
=100Ω.
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
2019-04/08
REV:O

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