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KM28C256-20

Description
EEPROM, 32KX8, 200ns, Parallel, CMOS, PDIP28, PLASTIC, DIP-28
Categorystorage    storage   
File Size47KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM28C256-20 Overview

EEPROM, 32KX8, 200ns, Parallel, CMOS, PDIP28, PLASTIC, DIP-28

KM28C256-20 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time200 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-PDIP-T28
JESD-609 codee0
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height5.59 mm
Maximum standby current0.0001 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
width15.24 mm
Maximum write cycle time (tWC)5 ms
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