ADVANCE D COM P ON E NTS PACKAG I NG
1 Gigabit Synchronous DRAM
DPSD128ME8XKY5
DESCRIPTION:
The Memory Stack™ series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the
space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb
(64M x 8) SDRAMs.
This 1Gb LP-Stack™ has been designed to fit in the
same footprint as the 512Mb (64M x 8) SDRAM TSOPII
monolithic. This stack allows for system upgrade without
electrical or mechanical redesign, providing an
alternative low cost memory solution.
FEATURES:
Y
•
•
Electrical characteristics meet semiconductor
manufacturers’ datasheets
R
Memory organization:
(2) 512Mb Memory devices. Each device arranged
as 64M x 8 bits (16M x 8 bits x 4 banks)
Memory stack organization:
128M x 8 bits (32M x 8 bits x 4 banks)
•
•
•
•
•
I
JEDEC approved, 2 Rank stack pinout and
footprint (with 2 CSs and 2 CKEs)
Optimized for RDIMMs
IPC-A-610, class 2, manufacturing standards
Lead free manufacturing process
Package: 54-Pin TSOPII stack
PIN-OUT DIAGRAM
VCC
DQ0
VCCQ
NC
DQ1
VSSQ
NC
DQ2
VCCQ
NC
DQ3
VSSQ
NC
VCC
CS1
WE
CAS
RAS
CS0
BA0
BA1
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
1
•
N
(TOP VIEW)
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ7
VSSQ
NC
DQ6
VCCQ
NC
DQ5
VSSQ
NC
DQ4
VCCQ
NC
VSS
CKE1
DQM
CLK
CKE0
A12
A11
A9
A8
A7
A6
A5
A4
VSS
E
L
M
I
A
A0-A12
P
BA0, BA1
DQ0-DQ7
CAS
RAS
WE
DQM
CKE0,CKE1
CLK
CS0, CS1
V
CC
/V
SS
V
CCQ
/V
SSQ
NC
30A226-21
REV. C 6/03
PIN NAMES
Row Address:
Column Address:
Data In/Data Out
R
A0-A12
A0-A9, A11
FUNCTIONAL BLOCK DIAGRAM
Bank Select Address
Column Address Strobe
Row Address Strobe
Data Write Enable
Data Input/Output Mask
Clock Enables
System Clock
Chip Selects
Power Supply/Ground
Data Output Power/Ground
No Connect
CS0
CKE0
RAS
CAS
WE
CLK
A0-A12
BA0,BA1
512 Mb SDRAM
(16M x 8 bits x 4 banks)
(16M x 8 bits x 4 banks)
CS1
CKE1
DQ0-DQ7
This document contains information on a product presently under development at DPAC Technologies Corp.
PAC reserves the right to change products or specifications herein without prior notice.
1
512 Megabit Synchronous DRAM
DPSD128ME8XKY5
ORDERING INFORMATION
DP
PREFIX
SD 128M
TYPE MEMORY
DEPTH
E
8
XK
DESIG
Y5
PACKAGE
- DP - XX
SUPPLIER
X
XXX
DESIG MEMORY
WIDTH
MFR ID MEMORY CYCLE
REVISION TIME
P12
P13
12
10
08
75
75P2
70
70P2
60
55
BLANK
n
PC100 / CL2
PC100 / CL3
12ns (83MHz)
10ns (100MHz)
8ns (125MHz)
7.5ns (133MHz) CL3
7.5ns (133MHz) CL2
7ns (143MHz) CL3
7ns (133MHz) CL2
6ns (166MHz) CL2
5.5ns (183MHz) CL3
REVISION NOT SPECIFIED
PER MANUFACTURER DIE REVISION
MANUFACTURER CODE *
SUPPLIER CODE *
STACKABLE TSOP
512 MEGABIT LVTTL BASED
Y
MODULE WITH DUAL CLOCK ENABLES
SYNCHRONOUS DRAM
R
* Contact your sales representative for supplier and manufacturer codes.
A
M
I
N
NOTE:
1. AC Parameters of base memory are unchanged from device manufacturers’ specifications.
2. DC Parameters may be affected by stacking. Please refer to application note 53A004-00 for further information.
3. For assembly and inspection procedures, refer to application note 53A001-00.
4. Maximum reflow temperature recommendation is 215°C.
MECHANICAL DIAGRAM
PIN 1
INDEX
I
TOP VIEW
SIDE VIEW
BOTTOM VIEW
E
L
R
.020 [.51]
TYP.
.891 MAX.
[22.63 MAX.]
.0315 [.80]
TYP.
P
.102 MAX. [2.59 MAX]
END VIEW
END VIEW DETAIL
.502±.008
[12.75±.20]
COPLANARITY:
.004 [.10] from seating plane
Inch [mm]
.463 [11.76] TYP
Lead Toe-to-Toe per device datasheet
30A226-21
REV. C 6/03
DPAC Technologies
Products & Services for the Integration Age
7321 Lincoln Way, Garden Grove, CA 92841
Tel
714 898 0007
Fax
714 897 1772
www.dpactech.com Nasdaq: DPAC
2
©2003 DPAC Technologies, all rights reserved. DPAC Technologies™, Memory Stack™, System Stack™, LP-Stack™, CS-Stack™ are trademarks of DPAC Technologies Corp.
Industrial Control Electronics
京公网安备 11010802033920号
EEWORLD
