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NDS356

Description
1100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size61KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

NDS356 Overview

1100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

NDS356 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage30 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current1.1 A
Maximum drain on-resistance0.2000 ohm
September 1996
NDS356AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT
TM
-3
P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss
are
needed in a very small outline surface mount package.
Features
-1.1 A, -30 V, R
DS(ON)
= 0.3
@ V
GS
=-4.5 V
R
DS(ON)
= 0.2
@ V
GS
=-10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOT
TM
-3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
Parameter
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
NDS356AP
-30
±20
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
±1.1
±10
0.5
0.46
-55 to 150
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS356AP Rev.C
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