A42
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Silicon
Plastic-Encapsulate Transistor
TO-92
FEATURES
Power dissipation
P
CM:
0.625
W (Tamb=25℃)
1
2
3
1 2
3
Collector current
I
CM:
0.5
A
Collector-base voltage
300
V
V
(BR)CBO:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
H
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
1
1. EMITTER
2
2. BASS
3
.
COLLECTOR
3
unless otherwise specified)
Test
conditions
MIN
300
300
5
0.25
0.1
60
80
75
0.2
0.9
50
V
V
MHz
250
TYP
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 1mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 200 V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 10 V, I
C
= 1 mA
V
CE
= 10V, IC = 10 mA
V
CE
= 10 V, I
C
=30 mA
I
C
= 20 mA, I
B
= 2 mA
I
C
= 20mA, I
B
= 2 mA
V
CE
=20 V, I
C
= 10 mA
f =
30MHz
µ
A
µ
A
f
T
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-100
B
1
100-150
B
2
150-200
C
200-250
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
A42
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
DC Current Gain
vs Collector Current
140
h
FE
- DC CURRE NT GAIN
120
100
80
60
40
20
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
- 40 °C
25 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
25 °C
125 °C
β
= 10
0.1
0.05
0.1
- 40 °C
V
CE
= 5V
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
BESAT
- BASE-EMITTER VOLTAGE (V)
V
BE(O N)
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
Base-Emitter ON Voltage vs
Collector Current
1
V
C E
= 1V
0.8
- 40 °C
0.8
- 40 °C
0.6
25 °C
0.6
25 °C
0.4
125 °C
β
= 10
0.4
125 °C
0.2
0.1
I
C
1
10
- COLLE CTOR CURRENT ( mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
I
CBO
- COLLECTOR CURRENT (nA)
Collector-Cutoff Current
vs Ambient Temperature
100
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
100
50
CAPACITANCE (pF)
20
10
5
2
C cb
Ceb
V
CB
= 150V
10
1
1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
1
10
100
REVERSE BIAS VOLTAGE (V)
1000
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
0.5
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
A42
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
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