BAS16T/BA
W56T/BA
V70T/BA
V99T
Plastic-Encapsulate Diodes
Elektronische Bauelemente
RoHS Compliant Product
Surface Mount Switching Diodes
A suffix of "-C" specifies halogen & lead-free
FEATURES
* Fast Switching Speed
* For General Purpose Switching Applications
* Ultra-Small Surface Mount Package
* Also Available in Lead Free Version
* High Conductance
TOP V IE W
B
G
H
K
M
E
B C
A
C
SOT-523
Dim
A
B
C
D
G
H
N
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
MECHANICAL DATA
* Case: SOT-523, Molded Plastic
* Case material: UL Flammability Rating 94V-0
* Moisture sensitvity: Leavel 1 per J-STD-020A
* Terminals: Solderable per MIL-STD-202,
Method 208
* Polarity: See Diagrams Below
* Weight: 0.002 grams (approx.)
* Mounting Position: Any
J
J
K
L
M
N
a
D
L
All Dimensions in mm
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
O
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 2)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Single diode
Double diode
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
I
FSM
P
d
R
θ
JA
T
j
, T
STG
Value
85
60
155
75
500
0.5
150
833
-65 to +150
Unit
V
V
mA
mA
A
mW
o
C/W
o
C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
85
¾
Max
¾
0.715
0.855
1.0
1.25
2.0
100
60
30
1.5
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
I
R
= 100mA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 25V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Leakage Current (Note 1)
Typical Total Capacitance
Reverse Recovery Time
Notes :
I
R
C
T
t
rr
¾
¾
¾
1. Short duration test pulse to minimize self-heating effect.
2. Device mounted on FR-4 PC board with recommended pad layout.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
Page 1 of 2
BAS16T/BA
W56T/BA
V70T/BA
V99T
Plastic-Encapsulate Diodes
Elektronische Bauelemente
Surface Mount Switching Diodes
Marking
BAS16T Marking: A2
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Typical Characteristics
300
BAS16T/BAW56T/BAV70T/BAV99T
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
250
I
F
, FORWARD CURRENT (mA)
200
Single diode loaded
0.1
T
A
= 150ºC
T
A
= 75ºC
T
A
= 25ºC
T
A
= 0ºC
T
A
= -40ºC
150
100
Double diode loaded
0.01
50
0
0
50
100
150
200
0.001
0
0.5
1.0
1.5
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
10000
T
A
= 150ºC
T
A
= 125ºC
2.0
1.8
C
T
, TOTAL CAPACITANCE (pF)
f = 1.0MHz
1000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
T
A
= 75ºC
10
T
A
= 25ºC
T
A
= 0ºC
1
T
A
= -40ºC
0.1
0
20
40
60
80
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
0.0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
Page 2 of 2
Embedded System
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