BCP1213
Elektronische Bauelemente
PNP
Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
The BCP1213 is designed for using in power amplifier applications
or power switching applications.
SOT-89
A
E
C
MARKING
Type Name
B
D
F
G
H
K
REF.
G
H
J
K
L
NY
hFE Ranking
REF.
A
B
C
D
E
F
Millimeter
J
Min.
Max.
4.40
4.60
4.05
4.25
1.40
1.60
2.40
2.60
1.50
1.70
0.89
1.20
L
Millimeter
Min.
Max.
-
-
1.50 REF.
3.00 REF.
0.40
0.52
0.35
0.41
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
J
, T
STG
Ratings
-50
-50
-5
-2
-0.4
500
1000
150, -55~150
Unit
V
V
V
A
A
mW
mW
°C
2
Note 1: Mounted on ceramic substrate (250mm x0.8t)
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain.
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time
Storage time
Fall time
Symbol
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
BE(sat)
V
CE(sat)
f
T
C
OB
t
ON
t
STG
t
F
Min.
-50
-
-
70
20
-
-
Max.
-
-100
-100
240
-
-1.2
-0.5
120 TYP.
40
0.1
1.0
0.1
Unit
V
nA
nA
Test Conditions
I
C
= -10 mA, I
B
= 0
V
CB
= -50 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -2 V, I
C
= -0.5 A
V
CE
= -2 V, I
C
= -2.0 A
I
C
= -1 A, I
B
= -0.05 A
I
C
= -1 A, I
B
= -0.05 A
V
CE
= -2 V, I
C
= -0.5 A
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
V
MHz
pF
μs
μs
μs
CLASSIFICATION OF hFE
Rank
hFE
O
70 – 140
Y
120 - 240
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 1 of 2
BCP1213
Elektronische Bauelemente
PNP
Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 2 of 2
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