KTC3875-Y-C datasheet, PDF - EEWORLD Datasheet

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KTC3875-Y-C: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), NPN; CategoryDiscrete semiconductor The transistor; File Size707KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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KTC3875-Y-C Overview

Small Signal Bipolar Transistor, 0.15A I(C), NPN

KTC3875-Y-C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SECOS
Reach Compliance Code	compliant
Maximum collector current (IC)	0.15 A
Configuration	Single
Minimum DC current gain (hFE)	120
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
surface mount	YES
Nominal transition frequency (fT)	80 MHz

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KTC3875

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

0.15A , 60V

NPN Plastic Encapsulated Transistor

FEATURES



SOT-23

A

3

High h

FE

Low noise

Complementary to KTA1504

1

L

Top View

C B

1

2

CLASSIFICATION OF h

FE

Product-Rank

Range

Marking Code

KTC3875-Y

120~240

ALY

KTC3875-GR

200~400

ALG

K

E

D

F

REF.

G

Millimeter

Min.

Max.

2.80

3.04

2.10

2.55

1.20

1.40

0.89

1.15

1.78

2.04

0.30

0.50

H

REF.

G

H

J

K

L

J

Millimeter

Min.

Max.

0.09

0.18

0.45

0.60

0.08

0.177

0.6 REF.

0.89

1.02

PACKAGE INFORMATION

Package

SOT-23

MPQ

3K

Leader Size

7 inch

A

B

C

D

E

F

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

60

50

5

150

150, -55~150

Unit

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Collector output capacitance

Noise figure

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

NF

Min.

60

50

5

-

120

-

80

-

Typ.

-

0.1

-

2.0

1

Max.

-

0.1

400

0.25

1

-

3.5

10

Unit

V

μA

V

MHz

pF

dB

Test Conditions

I

C

=100μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=100μA, I

C

=0

V

CB

=60V, I

E

=0

V

EB

=5V, I

C

=0

V

CE

=6V, I

C

=2mA

I

C

=100mA, I

B

=10mA

I

C

=100mA, I

B

=10mA

V

CE

=10V, I

C

=1mA

V

CB

=10V, I

E

=0, f=1MH

Z

V

CE

=6V, I

C

=0.1mA, Rg=10kΩ,

f=1KH

Z

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

22-Feb-2013 Rev. B

Page 1 of 3

KTC3875-Y-C Related Products

	KTC3875-Y-C	KTC3875-Y
Description	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor, 0.15A I(C), NPN
Is it Rohs certified?	conform to	conform to
Maker	SECOS	SECOS
Reach Compliance Code	compliant	compliant
Maximum collector current (IC)	0.15 A	0.15 A
Configuration	Single	Single
Minimum DC current gain (hFE)	120	120
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.15 W
surface mount	YES	YES
Nominal transition frequency (fT)	80 MHz	80 MHz

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