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BUL57AN2A

Description
TRANSISTOR,BJT,NPN,70V V(BR)CEO,22A I(C),SMT
CategoryDiscrete semiconductor    The transistor   
File Size342KB,4 Pages
ManufacturerSEMELAB
Environmental Compliance
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BUL57AN2A Overview

TRANSISTOR,BJT,NPN,70V V(BR)CEO,22A I(C),SMT

BUL57AN2A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMELAB
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)22 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)85 W
surface mountYES

BUL57AN2A Preview

HIGH POWER SILICON
NPN TRANSISTOR
BUL57AN2A, BUL57AN2B
High Voltage, High Current
Hermetic Ceramic Surface Mount Package
Ideally Suited For Electronic Ballast,
Switch Mode Power Supply Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IC(PK)
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
200V
70V
10V
22A
32A
6A
85W
0.68W/°C
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.47
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9499
Issue 1
Page 1 of 4
Website:
http://www.semelab-tt.com
HIGH POWER SILICON
NPN TRANSISTOR
BUL57AN2A, BUL57AN2B
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Cut-Off Current
Collector-Cut-Off Current
Emitter-Cut-Off Current
Test Conditions
IC = 10mA
IC = 1.0mA
IE = 1.0mA
VCB = 200V
IB = 0
IE = 0
IC = 0
IE = 0
TC = 125°C
VCE = 60V
VEB = 9V`
IB = 0
IC = 0
TC = 125°C
IC = 0.3A
VCE = 4V
VCE = 4V
VCE = 4V
IB = 0.1A
IB = 0.5A
IB = 1.5A
IB = 0.5A
IB = 1.5A
Min.
70
200
10
Typ
Max.
Units
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
V
10
100
100
10
100
30
25
20
55
50
35
0.05
0.15
0.35
0.88
1.0
90
60
50
0.2
0.6
1.5
1.2
1.4
V
µA
hFE
(1)
Forward-current transfer
ratio
IC = 5A
IC = 15A
IC = 1.0A
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 5A
IC = 15A
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 5A
IC = 15A
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 0.2A
f = 10MHz
Output Capacitance
VCB = 10V
f = 1.0MHz
IE = 0
280
pF
VCE = 4V
20
MHz
Cobo
Notes
(1) Pulse Width
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9499
Issue 1
Page 2 of 4
HIGH POWER SILICON
NPN TRANSISTOR
BUL57AN2A, BUL57AN2B
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
3.60 (0.142)
Max.
4.14 (0.163)
3.84 (0.151)
1
3
0.76
(0.030)
min.
10.69 (0.421)
10.39 (0.409)
2
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
SMD1 (TO-276AB)
Underside View
Pad 1 – Base
Pad 2 – Collector
Pad 3 - Emitter
BUL57AN2 Variants
Part Number
BUL57AN2A
BUL57AN2B
Description
Au Finished Pad
Hot Solder Dip - 63Sn/37Pb
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9499
Issue 1
Page 3 of 4
HIGH POWER SILICON
NPN TRANSISTOR
BUL57AN2A, BUL57AN2B
SCREENING OPTION
Space Level (JQRS/ESA) and High Reliability options are
available in accordance with the
High Reliability and
Screening Options Handbook
available for download from
the from the TT electronics Semelab web site.
ESA Quality Level Products are based on the testing
procedures specified in the generic ESCC 5000 and in the
corresponding part detail specifications.
Semelabs QR216 and QR217 processing specifications
(JQRS), in conjunction with the companies ISO 9001:2000
approval present a viable alternative to the American MIL-
PRF-19500 space level processing.
QR217 (Space Level Quality Conformance) is based on the
quality conformance inspection requirements of MIL-PRF-
19500 groups A (table V), B (table VIa), C (table VII) and
also ESA / ESCC 5000 (chart F4) lot validation tests.
QR216 (Space Level Screening) is based on the screening
requirements of MIL-PRF-19500 (table IV) and also ESA
/ESCC 5000 (chart F3).
JQRS parts are processed to the device data sheet and
screened to QR216 with conformance testing to Q217
groups A and B in accordance with MIL-STD-750 methods
and procedures.
Additional conformance options are available, for example
Pre-Cap Visual Inspection, Buy-Off Visit or Data Packs.
These are chargeable and must be specified at the order
stage (See Ordering Information). Minimum order
quantities may apply.
Alternative or additional customer specific conformance or
screening requirements would be considered. Contact
Semelab sales with enquires.
ORDERING INFORMATION
Part numbers are built up from Type, Package Variant, and
screening level. The part numbers are extended to include
the additional options as shown below.
Type – See Electrical Characteristics Table
Package Variant – See Mechanical Data
Screening Level – See Screening Options (ESA / JQRS)
Additional Options:
Customer Pre-Cap Visual Inspection
Customer Buy-Off visit
Data Pack
Solderability Samples
Scanning Electron Microscopy
Radiography (X-ray)
Total Dose Radiation Test
MIL-PRF-19500 (QR217)
Group B charge
Group B destructive mechanical samples
Group C charge
Group C destructive electrical samples
Group C destructive mechanical samples
ESA/ESCC
Lot Validation Testing (subgroup 1) charge
LVT1 destructive samples (environmental)
LVT1 destructive samples (mechanical)
Lot Validation Testing (subgroup 2) charge
LVT2 endurance samples (electrical)
Lot Validation Testing (subgroup 3) charge
LVT3 destructive samples (mechanical)
.CVP
.CVB
.DA
.SS
.SEM
.XRAY
.RAD
.GRPB
.GBDM (12 pieces)
.GRPC
.GCDE (12 pieces)
.GCDM (6 pieces)
.LVT1
.L1DE (15 pieces)
.L1DM (15 pieces)
.LVT2
.L2D (15 pieces)
.LVT3
.L3D (5 pieces)
Additional Option Notes:
1) All ‘Additional Options’ are chargeable and must be specified at order stage.
2) When Group B,C or LVT is required, additional electrical and mechanical destructive
samples must be ordered
3) All destructive samples are marked the same as other production parts unless
otherwise requested.
MARKING DETAILS
Typical marking would include part or specification number,
week of seal or serial number subject to available space and
legibility.
Customer specific marking requirements can be arranged at
the time of order.
Example Marking:
Example ordering information:
The following example is for the BUL57AN2 part with
package variant B, JQRS screening, additional Group C
conformance testing and a Data pack.
Part Numbers:
BUL57AN2B-JQRS
(Include quantity for flight parts)
BUL57AN2B-JQRS.GRPC
(chargeable conformance option)
BUL57AN2B-JQRS.GCDE
(charge for destructive parts)
BUL57AN2B-JQRS.GCDM
(charge for destructive parts)
BUL57AN2B-JQRS.DA
(charge for Data pack)
Customers with any specific requirements (e.g. marking or
screening) may be supplied with a similar alternative part
number (there is maximum 20 character limit to part
High Reliability and Screening Options Handbook link:
http://www.semelab.co.uk/pdf/misc/documents/hirel_and_screening_options.pdf
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9499
Issue 1
Page 4 of 4

BUL57AN2A Related Products

BUL57AN2A BUL57AN2B
Description TRANSISTOR,BJT,NPN,70V V(BR)CEO,22A I(C),SMT TRANSISTOR,BJT,NPN,70V V(BR)CEO,22A I(C),SMT
Is it Rohs certified? conform to conform to
Maker SEMELAB SEMELAB
Reach Compliance Code compliant compliant
Maximum collector current (IC) 22 A 22 A
Configuration Single Single
Minimum DC current gain (hFE) 30 30
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 85 W 85 W
surface mount YES YES

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