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BI6/12

Description
Bridge Rectifier Diode, 1 Phase, 2A, 1200V V(RRM), Silicon, 40 X 20 MM, 10 MM HEIGHT, METAL PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size311KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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BI6/12 Overview

Bridge Rectifier Diode, 1 Phase, 2A, 1200V V(RRM), Silicon, 40 X 20 MM, 10 MM HEIGHT, METAL PACKAGE-4

BI6/12 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionR-MSFM-W4
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-MSFM-W4
JESD-609 codee2
Maximum non-repetitive peak forward current125 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current2 A
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

BI6/12 Preview

BI 6
V
RSM
, V
RRM
V
400
800
1200
1600
1800
V
VRMS
V
280
560
800
1000
1250
I
D
= 9 A (T
c
= 65 °C)
Types
C
max
µF
R
min
Ω
BI 6/04
BI 6/08
BI 6/12
BI 6/16
BI 6/18
0,75
1,8
2,7
3,9
4,5
Symbol
I
D
Conditions
T
a
= 45 °C, P5A/100, natural cooling
2)
T
a
= 45 °C, chassis
T
a
= 45 °C, P5A/100, natural cooling
2)
T
a
= 45 °C, chassis
1)
T
a
= 45 °C, isolated
T
vj
= 25 °C, 10 ms
T
vj
= 150 °C, 10 ms
T
vj
= 25 °C, 8,3 ... 10 ms
T
vj
= 150 °C, 8,3 ... 10 ms
T
vj
= 25°C, I
F
= 10 A
T
vj
= 150°C
T
vj
= 150°C
T
vj
= 25°C, V
RD
= V
RRM
T
vj
= °C, V
RD
= V
RRM
≥ V
T
vj
= 150°C, V
RD
= V
RRM
T
vj
= °C, V
RD
= V
RRM
≥ V
T
vj
= 25°C
isolated
2)
chassis
total (from chips to bridge back side)
total
1)
Values
8
7
7
6
2,35
200
165
200
136
max. 1,2
max. 0,85
max. 30
50
5
10
2000
23
7
4
0,15
-40...+150
-55...+130
3000 / 2500
2 ± 15%
Units
A
A
A
A
A
A
A
2
As
2
As
V
V
m
µA
µA
mA
mA
µs
Hz
K/W
K/W
K/W
K/W
°C
°C
V~
Nm
Nm
2
m/s
g
A
Power Bridge Rectifiers
BI 6
Preliminary Data
I
DCL
I
FSM
it
V
F
V
(TO)
r
T
I
RD
I
RD
t
rr
f
G
R
th(j-a)
R
th(j-c)
R
th(c-s)
T
vj
T
stg
V
isol
M
s
M
t
a
w
Fu
Case
2
Features
Isolated metal case with in-line
wire leads
Ideal for printed circuit boards
Allow easy heatsink mounting
Solder temperature: 260°C max.
(max. 7 s)
Blocking voltage up to 1600 V
High surge current
Standard packing: 54 pieces box
Typical Applications*
Rectifier for power supplies
Input rectifier for variable
frequency drives
Rectifier for DC motor field
supplies
Battery charger rectifiers
Recommended snubber network:
RC: 0,1
μF,
50
(P
R
= 1 W)
Mounted on a 50 x 75 mm p.c.b.
Mounted on a painted metal sheet of min.
250 x 250 x 1 mm
Recommended V
VRMS
values:
V
VRMS
= V
RRM
/ 2,83
a.c. 50...60 Hz; r.m.s.; 1s / 1 min.
torque for mounting (M4 screw)
1)
2)
3)
approx.
20
40 x 20 x 10 mm plus 20 mm leads
BI
B (B2U)
1
01-10-2016 RP
© by SEMIKRON
BI 6
24
W
BI 06_01.XLS
24
2
1,5
0,6 0,15
BI 06_02.XLS
54
T
c
= R
th(c-a)
BI 6
W
BI 6
70
18
18
4
86
6
12
12
8
102
118
15
6
6
134
K/W
P
Vtot
0
0
I
1
D
2
3
4
5
6
7
8
9
10
11
P
Vtot
0
0
T
a
50
100
°C
°C
150
150
Fig. 3L Power dissipation vs. output current
Fig. 3R Power dissipation vs. case temperature
2
01-10-2016 RP
© by SEMIKRON
BI 6
Dimensions in mm
Case BI
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products descri be only the usual characteristics of products
to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must
be tested for the respective application in advance. Application adjustments may be n ecessary. The user of SEMIKRON
products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety
measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIK RON products
become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws,
regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by
authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the
product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation
or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information
herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any
license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others.
SEMIKRON makes no representation or warranty of non-infringement or alleged noninfringement of intellectual property
rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This
document supersedes and replaces all information previously supplied and may be super seded by updates. SEMIKRON
reserves the right to make changes.
3
01-10-2016 RP
© by SEMIKRON

BI6/12 Related Products

BI6/12 BI6/04
Description Bridge Rectifier Diode, 1 Phase, 2A, 1200V V(RRM), Silicon, 40 X 20 MM, 10 MM HEIGHT, METAL PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, 40 X 20 MM, 10 MM HEIGHT, METAL PACKAGE-4
Is it Rohs certified? conform to conform to
Maker SEMIKRON SEMIKRON
package instruction R-MSFM-W4 R-MSFM-W4
Reach Compliance Code compliant compliant
Other features UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-MSFM-W4 R-MSFM-W4
JESD-609 code e2 e2
Maximum non-repetitive peak forward current 125 A 125 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C
Maximum output current 2 A 2 A
Package body material METAL METAL
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 400 V
surface mount NO NO
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form WIRE WIRE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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