SMBJ SERIES
Taiwan Semiconductor
CREAT BY ART
600W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AA (SMB)
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
600
3
100
3.5 / 5.0
10
55
- 55 to +150
- 55 to +150
UNIT
W
W
A
V
°C/W
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Note 2: V
F
=3.5V on SMBJ5.0 - SMBJ90 and V
F
=5.0V on SMBJ100 - SMBJ170
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170
2. Electrical characteristics apply in both directions
Version: N1602
SMBJ SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
100
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
IFSM, PEAK FORWARD SURGE CURRENT (A)
tr=10μs
Peak value
I
PPM
8.3ms single half sine wave
unidirectional only
Half value-I
PPM
/2
10/1000μs waveform
as defined by R.E.A.
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100000
CJ, JUNCTION CAPACITANCE (pF)
A
10000
V
R
=0
1000
100
f=1.0MHz
Vsig=50mVp-p
V
R
-rated
stand-off
voltage
10
100
10
1
V(
BR
), BREAKDOWN VOLTAGE (V)
Version: N1602
ARM Technology
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