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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST50; BST51; BST52
NPN Darlington transistors
Product data sheet
Supersedes data of 2001 Feb 20
2004 Dec 09
NXP Semiconductors
Product data sheet
NPN Darlington transistors
FEATURES
•
High current (max. 0.5 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
APPLICATIONS
•
Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.
PINNING
PIN
1
2
3
BST50; BST51; BST52
DESCRIPTION
emitter
collector
base
2
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
MARKING
TYPE NUMBER
BST50
BST51
BST52
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST50
BST51
BST52
SC-62
DESCRIPTION
MARKING CODE
AS1
AS2
AS3
3
3
2
1
1
sym080
Fig.1 Simplified outline (SOT89) and symbol.
VERSION
SOT89
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2004 Dec 09
2
NXP Semiconductors
Product data sheet
NPN Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BST50
BST51
BST52
V
CES
collector-emitter voltage
BST50
BST51
BST52
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
Note
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C;
note 1
open collector
V
BE
= 0 V
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BST50; BST51; BST52
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−65
−65
MAX.
60
80
90
45
60
80
5
1
2
100
1.3
150
+150
+150
V
V
V
V
V
V
V
A
A
UNIT
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
2004 Dec 09
3
NXP Semiconductors
Product data sheet
NPN Darlington transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CES
PARAMETER
collector-emitter cut-off current
BST50
BST51
BST52
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
BE
= 0 V; V
CE
= 45 V
V
BE
= 0 V; V
CE
= 60 V
V
BE
= 0 V; V
CE
= 80 V
I
C
= 0 A; V
EB
= 4 V
V
CE
= 10 V; note 1; (see Fig.2)
I
C
= 150 mA
I
C
= 500 mA
V
CEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150
°C
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 500 mA; V
CE
= 5 V;
f = 100 MHz
CONDITIONS
BST50; BST51; BST52
MIN.
−
−
−
−
1 000
2 000
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
200
MAX.
50
50
50
50
−
−
1.3
1.3
1.9
−
UNIT
nA
nA
nA
nA
V
V
V
MHz
V
BEsat
f
T
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
off
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
turn-on time
turn-off time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
−0.5
mA
−
−
400
1 500
−
−
ns
ns
2004 Dec 09
4
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