Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon,
| Parameter Name | Attribute value |
| Maker | SHINDENGEN |
| package instruction | R-PSIP-T4 |
| Reach Compliance Code | unknown |
| Minimum breakdown voltage | 200 V |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.05 V |
| JESD-30 code | R-PSIP-T4 |
| Maximum non-repetitive peak forward current | 60 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Maximum output current | 1.5 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| Maximum reverse current | 10 µA |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| D2SBA20-4001 | D2SBA20-4004 | D2SBA20-4003 | D2SBA60-4003 | D2SBA60-4004 | D2SBA60-4001 | |
|---|---|---|---|---|---|---|
| Description | Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon, | Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon, | Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon, | Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon, | Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon, | Bridge Rectifier Diode, 1 Phase, 1.5A, Silicon, |
| Maker | SHINDENGEN | SHINDENGEN | SHINDENGEN | SHINDENGEN | SHINDENGEN | SHINDENGEN |
| package instruction | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Minimum breakdown voltage | 200 V | 200 V | 200 V | 600 V | 600 V | 600 V |
| Configuration | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| JESD-30 code | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 | R-PSIP-T4 |
| Maximum non-repetitive peak forward current | 60 A | 60 A | 60 A | 60 A | 60 A | 60 A |
| Number of components | 4 | 4 | 4 | 4 | 4 | 4 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Maximum output current | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum reverse current | 10 µA | 10 µA | 10 µA | 0.00001 µA | 0.00001 µA | 0.00001 µA |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |