BF721E6327 datasheet, PDF - EEWORLD Datasheet

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BF721E6327: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size101KB，4 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BF721E6327 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon

BF721E6327 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.6 V

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BF721E6327 Related Products

	BF721E6327	BF723E6433	BF721E6433	BF723E6327
Description	Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon
Maker	SIEMENS	SIEMENS	SIEMENS	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50	50
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.6 V	0.6 V	0.6 V	0.6 V

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