BUZ71A-E3046 datasheet, PDF - EEWORLD Datasheet

BUZ71A-E3046: DescriptionPower Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size201KB，8 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BUZ71A-E3046 Overview

Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	TO-220AB
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	6 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	40 W
Maximum pulsed drain current (IDM)	52 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	125 ns
Maximum opening time (tons)	90 ns

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