The UT54ACS04 and the UT54ACTS04 are hex inverters. The
circuits perform the Boolean function Y = A.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
INPUT
A
H
L
OUTPUT
Y
L
H
PINOUTS
14-Pin DIP
Top View
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
14-Lead Flatpack
Top View
A1
Y1
A2
Y2
A3
Y3
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
A6
Y6
A5
Y5
A4
Y4
LOGIC DIAGRAM
LOGIC SYMBOL
A1
A2
A3
A4
A5
A6
(1)
(3)
(5)
(9)
(11)
(13)
1
(2)
(4)
(6)
(8)
(10)
(12)
Y1
Y2
Y3
Y4
Y5
Y6
A4
and
A5
Y5
Y4
A3
Y3
A2
Y2
A1
Y1
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984
IEC Publication 617-12.
A6
Y6
9
RadHard MSI Logic
UT54ACS04/UT54ACTS04
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
JC
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
10
1
UNITS
V
V
C
C
C
C/W
mA
W
I
I
P
D
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
C
RadHard MSI Logic
10
UT54ACS04/UT54ACTS04
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V 10%; V
SS
= 0V
6
, -55 C < T
C
< +125 C)
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
I
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8mA
I
OL
= 100 A
I
OH
= -8mA
I
OH
= -100 A
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
= 1MHz @ 0V
= 1MHz @ 0V
15
15
pF
pF
1.8
10
1.6
mW/
MHz
A
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
A
V
V
OH
V
I
OS
I
OL
mA
mA
11
RadHard MSI Logic
UT54ACS04/UT54ACTS04
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SSs
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V 10%; V
SS
= 0V
1
, -55 C < T
C
< +125 C)
SYMBOL
t
PHL
t
PLH
Input to Yn
Input to Yn
PARAMETER
MINIMUM
1
1
MAXIMUM
19
11
UNIT
ns
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si)
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